Schottky Diode Layout for Low Reverse Leakage and High Current
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Solution Overview
Problem
Existing Schottky diodes face challenges with high reverse bias current and energy loss due to lower Schottky barrier heights, which affect device cut-off frequency and efficiency, and current fabrication methods are not entirely satisfactory.
Innovation Solution
The proposed solution involves forming Schottky barrier diodes with a metal silicide layer in contact with a P-well region, utilizing shallow trench isolation and a floating N-well/deep N-well structure to minimize reverse bias current, and creating interdigitated finger structures for the anode and cathode to increase forward current and device frequency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a lower Schottky barrier height is used to provide higher forward current, then forward current increases, but reverse bias current increases
Solution Approach 1:
The patent applies local quality by creating different doping concentrations in specific regions: a first doping concentration in the drift region and a second doping concentration in the extension region. This localized differentiation allows the extension region to provide low barrier height for high forward current while the drift region maintains higher barrier properties to suppress reverse bias current.
Solution Approach 2:
The patent changes the doping concentration parameter across different regions of the semiconductor device. By having a first doping concentration in the drift region and a second doping concentration in the extension region, the patent optimizes the balance between forward current and reverse bias current through parameter variation.
2Power
If Schottky barrier height is reduced to improve forward current, then forward current increases, but energy loss increases
Solution Approach 1:
The patent applies local quality by creating different doping concentrations in specific regions: a first doping concentration in the drift region and a second doping concentration in the extension region. This localized differentiation allows the extension region to provide low barrier height for high forward current while the drift region maintains higher barrier properties to suppress reverse bias current.
Solution Approach 2:
The patent changes the doping concentration parameter across different regions of the semiconductor device. By having a first doping concentration in the drift region and a second doping concentration in the extension region, the patent optimizes the balance between forward current and reverse bias current through parameter variation.
3Speed
If parasitic resistance at Schottky contact region is reduced to improve cut-off frequency, then cut-off frequency increases, but manufacturing complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the semiconductor device into distinct regions: a drift region and an extension region with different doping concentrations. This segmentation allows independent optimization of each region's properties to achieve low parasitic resistance while maintaining manufacturability through standard doping processes.
Solution Approach 2:
The patent changes the doping concentration parameter across different regions of the semiconductor device. By having a first doping concentration in the drift region and a second doping concentration in the extension region, the patent optimizes the balance between forward current and reverse bias current through parameter variation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in Schottky diodes with low forward turn-on voltage, high forward current, and reduced energy loss, suitable for applications like RF energy harvesting and wireless charging, while maintaining desired performance and reliability metrics.
Implementation Method 1
a metal silicide layer in contact with a P-well region, where a Schottky barrier is formed at a junction of the metal silicide layer and the P-well region
Data Source
AI summary
A semiconductor device includes a substrate having a P-well region, an N-well region disposed on either side of and abutting the P-well region, and a deep N-well region disposed beneath and abutting both the P-well region and at least part of the N-well region on either side of the P-well region. The semiconductor device further includes a first conductive layer formed over a cathode region of the P-well region, where a Schottky barrier is formed at a junction of the first conductive layer and the P-well region. The semiconductor device further includes a second conductive layer formed over anode regions of the P-well region, where the anode regions are disposed on either side of the cathode region.