Optoelectronic Device Electrode Configuration for Heat Dissipation
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Solution Overview
Problem
Conventional LED packages face limitations in high-temperature environments due to the degradation of thermosetting materials like epoxy, which restricts their application to low power consumption and hinders efficient heat dissipation and light extraction.
Innovation Solution
The optoelectronic device features a semiconductor stack with a specific electrode configuration and insulation layers to minimize distances between electrodes, enhancing electrical reliability and light extraction by increasing the reflective area and reducing the area of insulation coverage, thereby improving light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thermosetting material such as epoxy is used for encapsulation, then the semiconductor LED chip is protected and encapsulated, but the material degrades at high temperature and provides high resistance heat dissipation paths, limiting application to low power consumption
Solution Approach 1:
The patent removes the thermosetting encapsulation material (epoxy) from the LED package structure and replaces it with a metal cap. This extraction eliminates the fundamental limitation of epoxy degrading at high temperatures and providing high thermal resistance, while maintaining the protective function through the metal cap and improved electrode configuration.
Solution Approach 2:
The patent employs composite material strategy by using metal cap instead of organic encapsulation material, and combines multiple electrode materials (aluminum, copper, gold) with different thermal and electrical properties to create a package structure that simultaneously achieves excellent thermal management, electrical connectivity, and mechanical protection.
2Ease of manufacture
If conventional LED package structure with larger electrode distances is used, then manufacturing is simpler, but light extraction efficiency is reduced and electrical reliability is limited
Solution Approach 1:
The patent transitions from a conventional planar electrode arrangement to a three-dimensional configuration where the fourth electrode extends from the side surface of the first electrode. This dimensional change enables smaller distances between electrodes (D2 < D1) while maintaining manufacturability, thereby improving light extraction efficiency and electrical reliability without significantly complicating the manufacturing process.
3Reliability
If larger area of insulation coverage is used, then electrical isolation is improved, but light extraction area is reduced
Solution Approach 1:
The patent applies local quality principle by strategically positioning the insulation layer only where electrical isolation is critical (between adjacent electrodes), while leaving other areas exposed for light extraction. The fourth electrode extends through the insulation layer to create localized electrical connections, achieving effective electrical isolation with minimal impact on the overall light extraction area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the electrical reliability and light extraction efficiency of the optoelectronic device, allowing for improved performance in various applications beyond low power consumption, including higher brightness requirements.
Implementation Method 1
a semiconductor LED chip 12 comprises a p-n junction 13
Implementation Method 2
enhancing electrical reliability and light extraction by increasing the reflective area and reducing the area of insulation coverage
Data Source
AI summary
An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.


