Optoelectronic Device Heat Dissipation Pad Design

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Solution Overview

Problem

Conventional light-emitting diodes (LEDs) face challenges in heat dissipation, which can lead to reduced efficiency and lifespan due to the lack of effective heat management systems in their design.

Innovation Solution

The integration of a heat dissipation pad electrically insulated from the light-emitting units, which is formed between the electrodes and helps in dissipating heat efficiently, preventing breakdown and current leakage while operating the optoelectronic device.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If a conventional LED structure without dedicated heat dissipation components is used, then the device complexity is reduced, but heat dissipation efficiency deteriorates leading to reduced lifespan and performance

Engineering Contradiction:
Improveheat dissipation efficiencyVSAvoidstructure complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent combines the heat dissipation function with the existing electrode structure by forming the heat dissipation pad from the same conductive material layer that serves as the electrical electrode. This integration allows the device to dissipate heat effectively through the electrode structure without adding separate heat dissipation components, thereby resolving the contradiction between heat dissipation efficiency and device complexity

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The electrode structure is designed to serve dual functions: electrical conduction and heat dissipation. The heat dissipation pad formed from the conductive material layer acts as both an electrical contact point and a thermal management component, enabling the same structure to perform multiple functions simultaneously and eliminating the need for additional dedicated heat dissipation components

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Temperature

If electrodes are extended beyond the epitaxial stack boundary, then heat dissipation capability is improved, but manufacturing precision requirements increase due to alignment constraints

Engineering Contradiction:
Improveheat dissipation capabilityVSAvoidalignment precision
Core Design Contradiction:
TemperatureVSManufacturing precision

Solution Approach 1:

The patent forms the heat dissipation pad from the conductive material layer before transferring the device structure to the substrate. This preliminary formation of the heat dissipation structure allows for better control and reduces alignment complexity during subsequent manufacturing steps, as the heat dissipation pad is already in place to receive the transferred device without requiring precise alignment during the transfer process itself

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The heat dissipation pad effectively manages heat, enhancing the operational efficiency and lifespan of the optoelectronic device by preventing voltage-induced breakdowns and current leakage, thus improving the overall performance and reliability.

Implementation Method 1

a heat dissipation pad formed between the first electrode and the second electrode and electrically insulating from the light emitting unit

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS11705480B2Optoelectronic device with electrodes forming an outer boundary beyond an outer boundary of an epitaxial stack
Publication Date: 2023.07.18 ENNOSTAR CORP
  • US11705480B2 patent drawing
  • US11705480B2 patent drawing
  • US11705480B2 patent drawing

AI summary

An optoelectronic device comprises an epitaxial stack, comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a trench exposing a portion of the first semiconductor layer; a first insulating layer formed on a side wall of the trench to electrically insulate from the active layer and the second semiconductor layer; a first electrode formed on the trench; a second electrode formed on the second semiconductor layer; a supporting device covering the epitaxial stack; an optical layer covering the first electrode and the second electrode, comprising a plurality of openings corresponding to positions of the first electrodes and the second electrodes; a fifth electrode electrically connected with the first electrode; and a sixth electrode electrically connected with the second electrode, wherein the fifth electrode and the sixth electrode each comprises a side comprising a length longer that of an edge of the epitaxial stack.