Optoelectronic Component with Intermediary Layer for Absorption Reduction
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Solution Overview
Problem
Conventional optoelectronic semiconductor components face issues with light absorption due to the high refractive index of semiconductors, leading to reduced efficiency, and the introduction of a SiN layer for increased reflectivity can disrupt the semiconductor body during production, making electrical contact difficult and exposing underlying layers to chemicals.
Innovation Solution
An additional layer with low absorption properties is introduced between the semiconductor body and the dielectric layer, protecting the semiconductor body during production and allowing for selective opening, while also reducing absorption by increasing quantization energy in the p-contact, and optionally adding a further layer between the n-contact for similar protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a SiN layer is introduced between the mirror and semiconductor body to increase reflectivity, then light absorption is reduced, but the semiconductor body is disrupted during production and electrical contact becomes difficult
Solution Approach 1:
An additional layer made of semiconductor material (e.g., GaAs, InGaAlP) is introduced between the SiN dielectric layer and the semiconductor body. This intermediary layer serves dual purposes: it maintains the protective function during production processes and enables reliable electrical contact connection to the semiconductor body, while the SiN layer above it continues to provide optical protection and reflectivity enhancement.
Solution Approach 2:
The protective and contact-functional layers are segmented into distinct components: the SiN dielectric layer for optical protection and reflectivity, and a separate additional semiconductor layer for mechanical protection and electrical contact. This segmentation allows each layer to be optimized for its specific function without compromising the other.
2Loss of energy
If the GaAs layer is formed very thinly to achieve low absorption properties, then absorption is reduced, but the AlGaAs layer is exposed to chemicals and can be attacked during production
Solution Approach 1:
The additional semiconductor layer is deposited beforehand to provide a protective cushion over the thin GaAs layer and AlGaAs active zone. This pre-established protective layer shields the sensitive underlying layers from chemical attack during subsequent production processes, while the thin GaAs layer maintains its low absorption properties for optimal light extraction.
3Ease of operation
If the semiconductor body is opened to allow current flow through the SiN layer, then electrical contact is enabled, but the semiconductor body is disrupted in areas
Solution Approach 1:
The additional semiconductor layer acts as an intermediary that receives the opened contacts through the SiN layer and distributes current to the underlying semiconductor body. This intermediary structure enables electrical contact while preserving the integrity of the semiconductor body, as the contacts are established in the more robust additional layer rather than directly disrupting the delicate active zone.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the efficiency of the optoelectronic component by minimizing absorption, simplifying the production process, and reducing production costs, while maintaining the protective function of the semiconductor layers and ensuring reliable electrical contact.
Implementation Method 1
During the production process, in particular during the opening processes applied therein, the additional layer protects the semiconductor body in such a way that this body is not disrupted or is hardly disrupted to any perceptible degree
Implementation Method 2
the additional layer is of such a structure that it can be opened with respect to the semiconductor body with a high level of selectivity. The material of the additional layer is preferably selected such that the quantization energy in the p-contact of the electron states and hole states can be increased, whereby a further reduction in the absorption is advantageously made possible
Implementation Method 3
The dielectric layer is disposed between the semiconductor body and the mirror
Implementation Method 4
A high proportion of the light is subject to total reflection at the boundary surface between the semiconductor body and the SiN layer and therefore does not reach the mirror, whereby only the portion of the light which is not subject to total reflection undergoes reflection at the minor
Data Source
AI summary
An optoelectronic component has a semiconductor body, a dielectric layer, a mirror and an additional layer. The semiconductor body has an active zone for generating electromagnetic radiation and an n-contact and a p-contact (1b) for electrical contacting purposes. The dielectric layer is disposed between the semiconductor body and the mirror. The additional layer is disposed between the semiconductor body and the dielectric layer. Furthermore, a method for producing a component of this type is provided.