Optoelectronic Semiconductor Chip Recess Design
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Solution Overview
Problem
Optoelectronic semiconductor chips face a trade-off between increased out-coupling efficiency due to recesses in the semiconductor layer sequence and non-radiating re-combinations of charge-carriers, which reduce radiation generation efficiency.
Innovation Solution
The semiconductor chip design includes first recesses in the first semiconductor region that do not separate the active layer, and second recesses that partially separate the first semiconductor region and active layer, with oblique side surfaces to reduce non-radiating re-combinations and enhance radiation out-coupling, while connecting the semiconductor layer sequence to a carrier substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If recesses are formed in the semiconductor layer sequence to increase out-coupling efficiency, then radiation out-coupling is improved, but non-radiating re-combinations of charge carriers increase reducing radiation generation efficiency
Solution Approach 1:
The recess structure is divided into two distinct types: first recesses that do not separate the active layer and second recesses that partially separate the active layer. This segmentation allows each recess type to serve a specific function - the first recesses provide out-coupling enhancement while the second recesses minimize non-radiating re-combinations by creating controlled separation zones.
Solution Approach 2:
Different regions of the semiconductor layer sequence are given different structural qualities through the two types of recesses. The first recesses create local out-coupling enhancement zones, while the second recesses create local separation zones that reduce carrier recombination losses. This local differentiation of structural quality optimizes both out-coupling efficiency and radiation generation efficiency in their respective regions.
2Ease of manufacture
If recesses penetrate through the active layer to improve out-coupling, then radiation extraction is enhanced, but the active layer is separated reducing quantum efficiency
Solution Approach 1:
The recess system is segmented into two types with different penetration depths: first recesses that stop before separating the active layer and second recesses that create controlled partial separation. This segmentation enables the structure to achieve out-coupling enhancement without completely separating the active layer, thereby maintaining quantum efficiency while improving radiation extraction.
Solution Approach 2:
The second recesses perform a partial separation of the active layer rather than complete separation. This partial action is sufficient to reduce non-radiating re-combinations and improve out-coupling efficiency, while avoiding the excessive action of complete separation that would harm quantum efficiency. The partial separation achieves the desired effect without over-correcting.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves both out-coupling and quantum efficiency by reducing non-radiating re-combinations and minimizing multiple reflections, resulting in a high radiation yield.
Implementation Method 1
side surfaces are created by the recesses in the semiconductor layer sequence, on which part of the radiation emitted by the active layer is reflected such that when it impinges the radiation exit surface facing away from the carrier substrate, the radiation impinges within an exit cone and is thus not totally reflected at the radiation exit surface
Data Source
AI summary
An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate, wherein the semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active layer arranged between the first semiconductor region and the second semiconductor region, wherein the first semiconductor region faces the carrier substrate, the semiconductor layer sequence includes first recesses formed in the first semiconductor region and that do not separate the active layer, the semiconductor layer sequence includes second recesses that at least partially separate the first semiconductor region and the active layer, and the second recesses adjoin a first recess or are arranged between two first recesses.