Optoelectronic Device With Uninterrupted Semiconductor Layer
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Solution Overview
Problem
Existing optoelectronic devices integrating light-emitting components and field-effect transistors face challenges in compactness, surface irregularity, and complex manufacturing due to the presence of recesses and high dopant concentration, making it difficult to achieve a compact and planar design with efficient channel formation.
Innovation Solution
The optoelectronic device features a III-V or II-VI compound semiconductor structure with a channel in the first semiconductor layer uninterrupted between the transistor and light-emitting component, including trenches with conductive and insulating layers, and a third semiconductor layer with higher dopant concentration, facilitating a simpler manufacturing process and improved compactness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a recess is formed to separate the light-emitting component and transistor, then integration is achieved, but device compactness deteriorates
Solution Approach 1:
The patent merges the light-emitting component and transistor into a single integrated structure without requiring a recess to separate them. The active layer is formed continuously over both the light-emitting region and the transistor channel region, eliminating the need for recess formation and achieving compact integration.
Solution Approach 2:
The patent transitions from a planar separation approach (using recesses in the same layer) to a vertical integration approach where the active layer is formed in different regions of the same continuous layer, achieving separation of functions without lateral or vertical recess structures.
2Device complexity
If etching methods are used to form the annular portion, then separation is achieved, but manufacturing precision deteriorates due to difficulty in stopping etching
Solution Approach 1:
The patent extracts the separation function from the etching process and implements it through selective formation of the active layer in different regions. Instead of using etching to create separating structures, the active layer is formed to define functional regions, eliminating the need for precise etching stop control.
Solution Approach 2:
The patent introduces the active layer formation process as an intermediary method to achieve functional separation. Rather than relying on etching to create physical barriers, the active layer serves as the mediator that defines both the light-emitting region and transistor channel region without requiring recesses.
3Reliability
If high dopant concentration is used in the channel region, then transistor performance is improved, but device planarity deteriorates
Solution Approach 1:
The patent applies local quality by forming the active layer with different properties in different regions. The channel region has high dopant concentration for transistor performance, while the light-emitting region has appropriate dopant concentration for optoelectronic function, all within a continuous planar structure.
Solution Approach 2:
The patent changes the dopant concentration parameter locally within the continuous active layer. The channel region is doped at high concentration to improve transistor performance, while maintaining overall surface planarity through the continuous layer structure without recesses.
4Device complexity
If an irregular upper surface is formed, then integration structure is achieved, but ease of connection to external circuits deteriorates
Solution Approach 1:
The patent segments the device into distinct functional regions (light-emitting component and transistor) within a continuous planar structure. This allows each region to be optimized for its function while maintaining a flat upper surface for easy connection to external circuits through separate contact regions.
Data Source
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AI summary
The invention relates to an optoelectronic device (40) comprising a light-emitting component (LED) and a field-effect transistor (TMOS), the optoelectronic device comprising: a first semiconductor layer (46) made of a III-V or II-VI compound doped a first conductivity type; an active layer (50) of the light-emitting component; and a second semiconductor layer (54) made of the III-V or III-VI compound doped a second conductivity type opposite the first type, the active layer being sandwiched between the first and second semiconductor layers, wherein the channel (77) of the field-effect transistor is located in the first semiconductor layer, the first semiconductor layer being uninterrupted between the field-effect transistor and the light-emitting component.