Organic Electronic Device Contact Improving Layer
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Solution Overview
Problem
Current methods for producing organic electronic devices, such as planar and vertical organic field effect transistors, face challenges in simplifying the structuring process and achieving high current densities at low on-set voltages with a high ON current to OFF current ratio.
Innovation Solution
The use of a contact improving layer comprising an organic dopant material, specifically fluorinated Buckminster fullerenes like C60Fx, which is soluble in Hydrofluorether solvents, improves charge carrier injection and is incorporated into the device structure using a method that includes dipping and rinsing the layered device structure in Hydrofluorether, allowing for better process compatibility and yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If conventional contact materials are used in organic transistors, then the device structure is simple, but charge carrier injection is insufficient leading to low ON current
Solution Approach 1:
The patent introduces a contact improving layer as an intermediary between the electrode and the organic semiconductor. This layer, made from materials like F6-TCNNQ or C60Fx, mediates the charge carrier injection process by providing favorable energy level alignment and chemical stability, thereby enabling high ON current with conventional electrode materials.
Solution Approach 2:
The contact improving layer represents a composite material solution combining the electrode material with a dopant material (F6-TCNNQ or C60Fx) that has specific electronic properties. This composite structure at the contact interface provides both the mechanical stability of the electrode and the electronic functionality needed for high current injection.
2Power
If F6-TCNNQ is used as contact dopant to improve charge carrier injection, then ON current increases, but the processing yield decreases due to solubility issues
Solution Approach 1:
The patent changes the chemical parameter of the dopant material from F6-TCNNQ to C60Fx (fluorinated fullerenes). This parameter change fundamentally alters the solubility characteristics while maintaining the electronic properties needed for charge carrier injection. The C60Fx materials provide the same electrical functionality but with improved solubility in common organic solvents, enabling reliable processing.
Solution Approach 2:
The patent adopts materials (C60Fx) that can be easily processed and removed or degraded if needed, replacing the more persistent F6-TCNNQ. The fluorinated fullerenes offer similar electrical functionality but with better processability and environmental compatibility, allowing for easier manufacturing and potential removal if device revision is needed.
3Manufacturing precision
If more structuring steps are added to achieve precise electrode positioning, then manufacturing precision improves, but device complexity increases
Solution Approach 1:
The contact improving layer is deposited beforehand across the entire semiconductor surface before any electrode patterning steps. This preliminary action creates a uniform functional layer that simplifies subsequent processing, as the exact positioning of electrodes becomes less critical since the contact improving properties are already established across the channel region.
Solution Approach 2:
The contact improving layer serves multiple functions simultaneously: it provides charge carrier injection enhancement, acts as a protective layer during processing, and defines the active channel region. This multi-functionality reduces the need for separate structuring steps that would otherwise be required to achieve precise electrode positioning and channel definition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances charge carrier injection, increases the yield of functional devices, and provides a broader selection of chemically and thermally stable materials, leading to improved device performance and processability, particularly in achieving better ON current and process parameters.
Implementation Method 1
inserting the organic compound F6-TCNNQ as contact dopant between the electrodes (source and/or drain) and a semiconducting material improves the injection of charge carriers in an organic transistor
Implementation Method 2
The contact improving layer comprises an organic dopant material which is soluble in Hydrofluorether
Data Source
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AI summary
The application relates to a method of manufacturing an organic electronic device, comprising steps of: providing a layered device structure, the layered device structure comprising a plurality of electrodes and an electronically active region being provided in electrical contact with at least one of the plurality of electrodes, said providing of the layered device structure comprising steps of providing an organic semiconducting layer, applying a contact improving layer to the organic semiconducting layer by depositing an organic dopant material, wherein the organic dopant material is soluble in Hydrofluorether, depositing a layer material on the contact improving layer, and structuring the contact improving layer. Furthermore, an organic electronic device is disclosed.