Silicon-Containing Organic Insulator for Flexible Display Metal Patterning
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Solution Overview
Problem
Conventional inorganic insulating layers in display devices, such as silicon oxide or silicon nitride, exhibit poor coverage and bendability, leading to difficulties in patterning metal layers and potential insulation failures during the oxygen ion etching process, which affects the quality of OLED and flexible display devices.
Innovation Solution
A method involving a silicon-containing organic material, such as silicon-containing polyimide or polydimethylsiloxane, is used to form an insulating layer between metal layers, where an oxygen ion etching process creates a silicon oxide layer on the exposed surfaces, preventing etching of the insulating layer and ensuring proper insulation and pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an inorganic insulating layer (silicon oxide or silicon nitride) is used, then insulation between metal layers is achieved, but coverage and bendability are poor
Solution Approach 1:
The patent uses a composite structure consisting of an organic insulating layer (polyimide) as the base material and a silicon oxide layer formed by oxygen ion etching as a protective surface layer. This composite structure combines the flexibility and coverage of organic materials with the etching resistance of inorganic silicon oxide, resolving the contradiction between insulation reliability and adaptability.
2Adaptability or versatility
If polyimide is used as the insulating layer material, then coverage and bendability are improved, but the layer is easily etched in oxygen ion etching process
Solution Approach 1:
The patent introduces a silicon oxide layer as an intermediary protective layer on the surface of the polyimide insulating layer. This intermediary layer acts as a barrier that prevents oxygen ions from directly etching the polyimide during the etching process, while allowing the polyimide to maintain its inherent advantages of good coverage and bendability.
3Adaptability or versatility
If polyimide insulating layer is used, then coverage and bendability are improved, but recess formation on metal layer occurs during etching
Solution Approach 1:
The silicon oxide layer serves as a protective intermediary that prevents oxygen ions from etching the polyimide insulating layer during the metal layer patterning process. By preventing the insulating layer from being etched, the protective layer ensures that the metal layer maintains its original pattern and flatness without forming recesses, thereby improving manufacturing precision while retaining the benefits of polyimide material.
4Adaptability or versatility
If polyimide insulating layer is used, then coverage and bendability are improved, but insulation between metal layers may be destroyed
Solution Approach 1:
The silicon oxide protective layer acts as an intermediary barrier that prevents oxygen ion etching of the polyimide insulating layer. By protecting the insulating layer from being etched away, this intermediary layer ensures that the insulation between metal layers is maintained throughout the fabrication process, preventing short circuits and ensuring reliable device operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the coverage and bendability of the insulating layer, reduces process steps and costs, and improves product quality by maintaining insulation integrity and preventing recess formation, thus enhancing the performance and yield of display devices.
Implementation Method 1
forming a silicon oxide layer, by the oxygen ion etching process, on a surface of the insulating layer not covered by the second metal layer
Data Source
AI summary
A method for fabricating an array substrate includes: forming a first metal layer on a base substrate; forming an insulating layer of a silicon-containing organic material on the first metal layer; forming a second metal layer on the insulating layer; patterning the second metal layer by adopting an oxygen ion etching process to partially cover the insulating layer; and forming a silicon oxide layer, by the oxygen ion etching process, on a surface of the insulating layer not covered by the second metal layer.