Organic Charge-Trapping Memory Stack With Composite Retention Layer
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Solution Overview
Problem
Conventional charge trapping non-volatile organic memory devices face challenges in achieving high reliability and mass production due to issues with charge mobility in metal thin film layers and weak binding forces in electret methods, leading to performance degradation over time.
Innovation Solution
A charge trapping non-volatile organic memory device utilizing an organic-inorganic composite film with metal oxides dispersed in a polymer matrix as a trapping layer, where the metal oxide is bonded to the polymer via oxygen, creating a stable energy barrier for charge confinement, and a stacked structure with an organic blocking layer and tunneling layer to enhance retention and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal thin film layers are used to confine charges, then charge trapping capability is improved, but charge mobility increases causing horizontal movement of trapped charges and requiring additional insulating layers
Solution Approach 1:
The patent uses an organic-inorganic composite trapping layer combining metal nanoparticles with organic materials (such as polymers or small molecules). This composite structure provides effective charge trapping while the organic matrix suppresses horizontal charge mobility, eliminating the need for additional insulating layers between memory devices.
Solution Approach 2:
The organic material acts as an intermediary matrix that hosts the metal nanoparticles. This intermediary prevents direct contact between metal layers and reduces charge mobility while maintaining trapping capability, thereby simplifying the device structure.
2Reliability
If metal nanoparticles are inserted into charge trapping layer, then charge mobility is suppressed, but highly controlled process is required due to ultra-fine structure and uniform size control is difficult
Solution Approach 1:
The patent changes the size parameter of metal particles from nanoscale to microscale (0.1-10 micrometers). This parameter change eliminates the need for highly controlled nanoparticle synthesis processes, as larger particles can be easily dispersed in organic materials using conventional mixing and deposition techniques without requiring uniform size distribution.
Solution Approach 2:
The patent uses easily obtainable metal particles (such as aluminum, calcium, or their oxides) that can be produced through simple processes rather than requiring precise nanoparticle synthesis. These particles are dispersed in organic materials and deposited using conventional thin film deposition techniques, significantly simplifying manufacturing.
3Ease of manufacture
If heterogeneous insulating films are bonded to trap charges, then process is simplified, but binding force of trapped charges is weak causing memory properties to be lost over time
Solution Approach 1:
The patent creates a composite trapping layer where metal particles (or their oxides) are dispersed within an organic material matrix. This composite structure provides strong charge trapping through the metal particles while maintaining the simplicity of processing organic materials, achieving both ease of manufacture and high reliability.
Solution Approach 2:
The patent concentrates charge trapping functionality in localized regions around metal particles dispersed throughout the organic matrix. This local quality approach allows the bulk organic material to provide ease of processing while the metal particle regions provide strong charge binding, achieving both simplicity and reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a high-performance, commercially viable memory device with improved retention, temperature reliability, and deformation reliability, maintaining a wide threshold voltage window and long-term stability without defects, enabling efficient mass production.
Implementation Method 1
an organic-inorganic composite film, in which a metal oxide is dispersed in a polymer matrix, as a trapping layer for trapping charges
Implementation Method 2
a lowest unoccupied molecular orbital (LUMO) energy level of the blocking layer and a LUMO energy level of the tunneling layer may each be higher than that of the trapping layer
Data Source
AI summary
A charge trapping non-volatile organic memory device according to the present invention has a structure in which an organic matter-based blocking layer, a trapping layer, and a tunneling layer are sequentially positioned between a gate and an organic semiconductor layer positioned on an insulating substrate, the trapping layer including a metal oxide and a polymer, and has an organic-inorganic composite film in which the metal oxide is dispersed in a polymer matrix in units of atoms.