Organic Semiconductor Patterning via Donor Substrate Transfer

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Solution Overview

Problem

Current methods for patterning low-molecular weight organic semiconductors, such as pentacene, face challenges including high costs, difficulty in handling shadow masks, and limitations in producing high-definition, large-screen displays due to sagging masks and low luminous efficiency in organic light-emitting diodes.

Innovation Solution

A donor substrate with a base substrate and a transfer layer containing an organic semiconductor precursor with a thermally decomposable substituent is used, allowing for the formation of an organic semiconductor layer pattern through a wet process without deposition, using energy sources like heat or light to transfer the precursor to a receptor substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If shadow mask method is used for patterning low-molecular weight organic semiconductor, then deposition can be performed without lithography process, but shadow mask becomes expensive and cannot be unlimitedly used due to close positioning to substrate

Engineering Contradiction:
Improvepatterning process simplicityVSAvoidshadow mask handling complexity
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The patent uses a shadow mask pattern as a template to create a photomask, which is then used for photolithography to form the organic semiconductor pattern. This copying approach eliminates the need for direct shadow mask deposition, allowing unlimited reuse of the photomask while maintaining pattern fidelity.

Inventive Principle:
Principle #26Copying

Solution Approach 2:

The patent introduces a photomask as an intermediary between the shadow mask pattern and the organic semiconductor layer. The photomask serves as a durable intermediate template that can be reused indefinitely, replacing the consumable shadow mask while preserving the intended pattern geometry.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If shadow mask is disposed very close to substrate to form fine pattern, then fine pattern can be achieved, but shadow mask is expensive and cannot be unlimitedly used

Engineering Contradiction:
Improvepattern finenessVSAvoidshadow mask reusability
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The shadow mask pattern is copied onto a photomask through photolithography, creating a reusable template that maintains the fine pattern geometry. This allows the pattern design to be preserved without the physical constraints and costs of repeated shadow mask fabrication.

Inventive Principle:
Principle #26Copying

Solution Approach 2:

The patent replaces the mechanical shadow mask deposition system with a photolithography system using light and photomasks. This substitution eliminates the mechanical constraints of shadow mask positioning and reuse, allowing unlimited use of the photomask while maintaining fine pattern resolution.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Temperature

If radiation heat from heating device is applied to deposited material, then material can be heated for processing, but shadow mask sags due to thermal expansion

Engineering Contradiction:
Improvedeposited material heatingVSAvoidshadow mask shape stability
Core Design Contradiction:
TemperatureVSStability of the object's composition

Solution Approach 1:

The pattern geometry is copied to a photomask before the heating step, so subsequent thermal processing does not affect shadow mask shape. The photomask serves as a stable template that can withstand the heating process without deforming.

Inventive Principle:
Principle #26Copying

Solution Approach 2:

The photomask acts as an intermediary that separates the pattern definition step from the thermal processing step. This allows the pattern to be established before heating, eliminating the thermal expansion problem that would otherwise distort the shadow mask during heating.

Inventive Principle:
Principle #24Intermediary (Mediator)

4Area of stationary object

If shadow mask is used for large substrate, then large area can be covered, but sagging of center portion becomes more serious blocking high-definition display manufacture

Engineering Contradiction:
Improvesubstrate coverage areaVSAvoidpattern definition accuracy
Core Design Contradiction:
Area of stationary objectVSManufacturing precision

Solution Approach 1:

The shadow mask pattern is copied to a photomask that can be manufactured with precise dimensions suitable for large substrates. This copying process allows the pattern design to be scaled to large areas without the mechanical sagging problems of physical shadow masks.

Inventive Principle:
Principle #26Copying

Solution Approach 2:

The patent replaces the mechanical shadow mask system with a photolithography system using photomasks. This substitution eliminates the gravitational sagging issue that plagues large-area shadow masks, enabling high-definition patterning across large substrate areas.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the cost-effective production of high-definition, large-screen displays with improved luminous efficiency and flexibility, overcoming the limitations of traditional shadow mask techniques and deposition processes.

Implementation Method 1

a transfer layer containing an organic semiconductor precursor having a thermally decomposable substituent

Methodology Applied
Scientific EffectThermal decomposition: Pyrolysis

Implementation Method 2

applying an energy source to the donor substrate to transfer the transfer layer to the receptor substrate

Methodology Applied
Scientific EffectThermal energy transfer: Conduction (thermal)

Data Source

PatentUS8057848B2Method of forming organic semiconductor layer pattern
Publication Date: 2011.11.15 SAMSUNG DISPLAY CO LTD
  • US8057848B2 patent drawing
  • US8057848B2 patent drawing
  • US8057848B2 patent drawing

AI summary

A donor substrate and a method of forming an organic semiconductor layer pattern using the donor substrate, whereby a donor substrate is formed using an organic semiconductor precursor having a thermally decomposable substituent through a wet process, the organic semiconductor precursor substrate in the donor substrate is transferred to a receptor substrate as a pattern and heated, and thus is changed into an organic semiconductor. As a result, an organic semiconductor layer pattern is obtained. The method can be used in the manufacture of various devices such as organic light emitting diode and organic thin film transistor. A low-molecular weight organic semiconductor layer pattern can be formed through a wet process, not through deposition. Thus, using the method, a flat display device can be conveniently manufactured at low cost.