Solid-State Devices TRIZ Cases

A wavelength conversion layer uses Group III nitride semiconductors doped with rare earth elements to convert primary light into desired colors.

A metal protective layer shields non-soldering regions of micro LED pixel electrodes from organic solvent corrosion, ensuring reliable chip bonding.

Thermal expansion fills a dimple in a preliminary plug, eliminating multiple chemical mechanical polishing steps.

Protruding contact holes in the color filter layer accept conductive fill-in material, reducing level gaps and preventing pixel electrode disconnection.

A sheet-like adhesive member extends from first surfaces to side surfaces of sensor substrates.

A vertical diode barrier region blocks boron diffusion from the semiconductor pattern into the interlayer insulating layer.

A high-mobility fin structure traps crystalline lattice dislocations within a recess below the isolation layer on an SOI substrate.

An insulation element positioned between adjacent transparent electrodes blocks electric field interference in array substrates.

Light-induced electron transfer materials absorb emitted light to generate additional charge carriers within OLED elements.

Relocating the second electrode to the bottom surface via a conductor prevents breakage of exposed semiconductor layers during mounting.

Lowering the refractive index of the second organic layer increases external and substrate mode light extraction without increasing manufacturing complexity.

P-doped arylamine compounds enhance hole injectability and electron blocking to resolve efficiency trade-offs in organic electroluminescent devices.

Concave patterns on the inner surface of a curved cover window prevent bubble formation and delamination caused by stress at the interface.

Elevated metal routing layers shift signal paths away from the photosensor plane, resolving light obstruction trade-offs in high-density CMOS imagers.

Alkyl bromide reacts with palladium to measure current difference, detecting conductive polymers without damaging magnetic layer patterns.

Self-assembled ion gel dielectric enables fast switching in organic thin film transistors.

Dry etching layered thin films creates stable inverted trapezoid cathode separators, reducing IR drop and improving OLED display quality.

Non-emissive quantum dots block electron accumulation at the interface, balancing charge carriers and extending device lifespan.

A triple patterning method segments complex integrated circuit features into three photomask layouts to define precise structural geometry.

Thermal oxidation replaces ion implantation to form oxide layers, eliminating particle defects and preserving single-crystal silicon conductivity.

A donor substrate transfers an organic semiconductor precursor to a receptor substrate using heat or light energy.

Transparent conductive interconnect lines replace opaque metal traces to eliminate light interference while maintaining electrical connectivity.

Segmented CF4 and C4F8 plasma steps eliminate gas replacement delays, preventing mask clogging while preserving side wall verticality.

A 3D stacked flash memory array uses a cut-off gate line to operate two memory cells per word line.

Integrating functional layers within the thin film packaging reduces total panel thickness, shortening the optical path to improve luminous flux efficiency.

Segmented electrode films prevent shorting between layers while maintaining low resistance and high writing speed.

Segmented conductive word lines with wider spacer portions increase memory cell current while maintaining tight integration intervals.

A light-emitting device package uses fluoro-based red phosphors excited by blue and green LEDs to achieve high color purity.

A rigid member bridges height differences in digitizer wiring to create a flat reference plane for the protective film.

A vertical micro-LED device uses a sapphire growth substrate for direct light emission and electrode formation.

Asymmetric diffusion layer widths maintain junction breakdown voltage while reducing transistor pitch to shrink chip surface area.

Selective deposition builds nickel oxide resistance-switching elements, eliminating difficult chemical etching steps that increase fabrication complexity.

Segmented p-type and n-type tubs block parasitic PNP paths, enhancing latch-up immunity while maintaining reliable voltage clamping between high voltage pins.

Segmented signal bus lines maintain voltage uniformity across large display areas by reducing transmission path resistance.

A back channel protection insulating film on a thin film transistor structure.

A strained epitaxial semiconductor shell forms on a fin field effect transistor to enhance carrier mobility and increase on-current density.

Selective transmission-reflection layer with optimized dielectric optical thicknesses enhances luminous flux in semiconductor light-emitting devices.

Segmented fingered electrodes in a trench structure optimize current injection, reducing light absorption loss and improving device lifespan.

A polysilicon thin film transistor uses the gate metal layer to trap residual catalyst atoms during gettering heat treatment.

Bridge electrodes extend into seam regions to couple connection lines, eliminating bezel gaps and ensuring uniform light reflectance for seamless imagery.

Segmented encapsulation layers with varying refractive indices redirect lateral light to improve efficiency and reduce power consumption.

Auxiliary charge generation layers supply electrons and holes to OLED emitting units, extending device lifespan by up to 35%.

Patterned opaque films eliminate buffer layer height differences that degrade polycrystalline silicon crystallization performance in LTPS array substrates.

A multi-level cell NOR flash memory device uses a metal silicide layer on gate lines to enhance transconductance and electrical uniformity.

A quantum-dot electroluminescent device uses a single light-emitting layer to produce white light.

A display device uses an alignment-inducing layer to guide light-emitting elements, reducing random distribution and light loss during manufacturing.

Condensing resist gas into a solid film and selectively heating it to pattern organic semiconductor layers without solvents.

Stacked photodiodes reduce noise amplification during color correction by applying chroma de-noising and point filtering to isolate spectral components.

Measuring actual unit capacities enables selection algorithms to combine low and high capacity chips, resolving waste issues from manufacturing variations.