Organic Semiconductor Nanocomposite Electrodes for Low Contact Resistance
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Solution Overview
Problem
Organic thin film transistors (OTFTs) face high contact resistance and poor adhesion between semiconductor layers and source/drain electrodes due to different surface properties, leading to lower charge mobility and higher operating voltages compared to conventional silicon thin film transistors.
Innovation Solution
Forming both the semiconductor layer and source/drain electrodes using organic semiconductor type materials with added carbon-based nanoparticles, allowing for a room-temperature wet process that improves adhesion and reduces contact resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal or metal oxide is used for source/drain electrodes, then electrical conductivity is improved, but adhesion to organic semiconductor layer deteriorates due to different surface properties
Solution Approach 1:
The patent applies homogeneity by using organic semiconductor materials for both the semiconductor layer and source/drain electrodes, ensuring similar surface properties and chemical composition. This eliminates the adhesion problem caused by heterogeneous material interfaces while maintaining electrical conductivity through the intrinsic conductive properties of the organic semiconductor material.
Solution Approach 2:
The patent employs composite materials by combining organic semiconductor materials with conductive additives or dopants to create source/drain electrodes that exhibit both good adhesion (due to organic-organic compatibility) and high electrical conductivity (enhanced by conductive components).
2Reliability
If metal or metal oxide is used for source/drain electrodes, then electrical conductivity is improved, but contact resistance increases due to Schottky barrier formation
Solution Approach 1:
By using the same organic semiconductor material for both the semiconductor layer and source/drain electrodes, the patent eliminates the Schottky barrier that forms at heterogeneous metal-organic interfaces. The homogeneous material interface ensures ohmic contact with low contact resistance while maintaining adequate electrical conductivity.
Solution Approach 2:
The patent changes the material parameters by selecting organic semiconductor materials with appropriate work functions and doping levels to achieve low contact resistance. By adjusting the conductivity parameters of the organic semiconductor through doping, the patent optimizes both contact resistance and overall electrical conductivity.
3Manufacturing precision
If conventional fabrication processes are used, then manufacturing precision is maintained, but production cost increases and scalability decreases
Solution Approach 1:
The patent replaces conventional vacuum-based physical vapor deposition processes with solution-based spin coating or dip coating methods. This substitution enables low-cost, scalable manufacturing while maintaining adequate film thickness control and uniformity through solution processing parameters.
Solution Approach 2:
The patent changes the processing parameters by conducting fabrication at room temperature using solution-based methods instead of high-temperature vacuum processes. This enables the use of flexible substrates and roll-to-roll manufacturing while maintaining sufficient film quality for device operation.
4Reliability
If self-assembled monolayer treatment is applied to increase charge mobility, then charge mobility is improved, but device complexity and fabrication difficulty increase
Solution Approach 1:
The patent merges the semiconductor layer formation and electrode formation into a single material system using organic semiconductors for both components. This eliminates the need for separate SAM treatment steps, as the homogeneous organic-organic interface inherently provides good charge injection without additional surface modification complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in decreased contact resistance and improved charge mobility, enabling easier and cost-effective manufacturing of OTFTs through a roll-to-roll process.
Implementation Method 1
both a semiconductor layer and source/drain electrodes may be formed using organic semiconductor type materials obtained by adding carbon-based nanoparticles to organic semiconductor materials in different amounts
Data Source
AI summary
Disclosed is an organic electronic device, in which a semiconductor layer and source/drain electrodes may be formed from materials of the same type, suitable for a room-temperature wet process, and thus have surface properties similar to each other, thereby decreasing contact resistance between the semiconductor layer and the source/drain electrodes. The materials for formation of the semiconductor layer and source/drain electrodes may be organic semiconductor type materials obtained by adding carbon-based nanoparticles to organic semiconductor materials in predetermined or given amounts. As such, the conductivity of a semiconductor or conductor may vary depending on the amount of carbon-based nanoparticles.