Organic Semiconductor Polymer for Flexible Transistors
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Solution Overview
Problem
Conventional amorphous silicon thin film transistors face challenges in high-temperature processing, making it difficult to apply them to polymer substrates for flexible displays, and existing organic thin film transistors have limitations in charge mobility and off-state current loss.
Innovation Solution
Development of an organic semiconductor polymer with increased solubility and coplanarity, specifically represented by Chemical Formula (1), which is used in the active layer of a transistor, enhancing charge mobility and reducing off-state current loss, and synthesized using methods like Stille, Suzuki, and Yamamoto reactions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional amorphous silicon thin film transistor is used, then uniformity and electrical characteristics are improved, but high-temperature processing capability deteriorates
Solution Approach 1:
The patent changes the material composition parameters by introducing specific organic semiconductor compounds (compounds 1-6) with tailored molecular structures containing electron-donating and electron-withdrawing groups. This chemical parameter change enables the material to achieve good electrical characteristics while being processable at lower temperatures suitable for polymer substrates
Solution Approach 2:
The patent creates composite organic semiconductor materials by combining electron-donating groups (such as triphenylamine, carbazole) with electron-withdrawing groups (such as benzene-1,3,4-tricarboxylic acid derivatives) in specific molecular structures. This composite approach achieves both uniform electrical characteristics and compatibility with low-temperature processing
2Reliability
If conventional amorphous silicon thin film transistor is used, then electrical characteristics are improved, but adaptability to polymer substrate deteriorates
Solution Approach 1:
The patent changes the material state from inorganic amorphous silicon to organic semiconductor compounds, fundamentally altering the material parameters to enable solution processing. This allows deposition on polymer substrates at low temperatures while maintaining good electrical characteristics through molecular structure design
Solution Approach 2:
The patent replaces the vacuum deposition process required for amorphous silicon with solution-based deposition methods (spin coating, drop casting). This substitution of deposition mechanism enables processing on flexible polymer substrates that cannot withstand vacuum deposition conditions
3Ease of manufacture
If low molecular organic semiconductor material is used, then solubility is improved, but charge mobility deteriorates
Solution Approach 1:
The patent designs composite molecular structures combining electron-donating groups (triphenylamine, carbazole) with electron-withdrawing groups (benzene-1,3,4-tricarboxylic acid derivatives) in specific arrangements. This composite approach achieves both solubility in common organic solvents and high charge mobility by optimizing the molecular packing and intermolecular interactions
Solution Approach 2:
The patent introduces specific functional groups at different positions of the molecular structure to achieve local optimization: electron-donating groups enhance solubility and processability, while electron-withdrawing groups and their specific arrangements enhance charge transport properties, achieving both solubility and high charge mobility
Data Source
AI summary
An organic semiconductor polymer and transistor are provided, the organic semiconductor polymer is represented by the following Chemical Formula (1)