Organic Semiconductor Device with Segmented Active Layer

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Solution Overview

Problem

Organic semiconductor devices have low mobility, limiting their application range and performance improvement due to their inherent characteristics, and single-layer structures with high electrical conductivity materials like graphene can compromise on/off current ratios.

Innovation Solution

A semiconductor device structure featuring a first layer with an organic semiconductor and a second layer with higher electrical conductivity, such as graphene, silver, copper, nickel, or molybdenum disulphide, separated from the electrodes, which enhances mobility and maintains multi-functionality by achieving a high on/off current ratio.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If organic semiconductor material is used, then multi-functionality is achieved, but mobility is limited

Engineering Contradiction:
Improvemulti-functionalityVSAvoidmobility
Core Design Contradiction:
Adaptability or versatilityVSSpeed

Solution Approach 1:

The active layer is divided into two functional segments: the first layer uses organic semiconductor material to provide multi-functionality (sensing, switching, and conduction capabilities), while the second layer uses high-mobility material (graphene, metal, or high-mobility semiconductor) specifically for rapid charge transport. This segmentation allows the device to achieve both multi-functionality and high mobility simultaneously

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The active layer employs a composite structure combining organic semiconductor material with high-mobility material (graphene, metal, or semiconductor). This composite approach leverages the advantages of both material types - the organic material provides chemical stability, multi-functionality, and appropriate energy levels, while the high-mobility material provides rapid charge transport, achieving overall high device mobility

Inventive Principle:
Principle #40Composite materials

Data Source

PatentUS9466805B2Semiconductor devices and methods of manufacturing the same
Publication Date: 2016.10.11 SAMSUNG ELECTRONICS CO LTD
  • US9466805B2 patent drawing
  • US9466805B2 patent drawing
  • US9466805B2 patent drawing

AI summary

According to example embodiments, a semiconductor device includes a first electrode, a second electrode apart from the first electrode, and an active layer between the first and second electrodes. The active layer includes first and second layers, the first layer contacts the first and second electrodes, and the second layer is separated from at least one of the first and second electrodes.