Organic Semiconductor Single-Crystal Channel Layer for High Mobility
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices using amorphous silicon as a semiconductor channel layer suffer from low carrier mobility, which limits their performance and stability, especially when deformed, making them unsuitable for high-speed and flexible electronic applications.
Innovation Solution
The development of an organic semiconductor device with a single-crystalline channel layer made of organic semiconductor nuclei arranged in the same crystal orientation, utilizing a seed nucleus to form sub-nuclei that cover the source, drain, and carrier, and a method involving temperature processing to create a stable and high-mobility channel layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If amorphous silicon is used as the semiconductor channel layer, then the device structure is simple and easy to manufacture, but the carrier mobility is low and the device performance is limited
Solution Approach 1:
The patent changes the material parameter from amorphous silicon to organic semiconductor single-crystalline material, fundamentally altering the crystal structure and chemical composition to achieve higher carrier mobility while maintaining manufacturing feasibility through solution processing
Solution Approach 2:
The patent uses composite material strategy by combining organic semiconductor materials with single-crystalline structure, achieving both high carrier mobility and structural stability that overcomes the limitations of conventional amorphous silicon
2Adaptability or versatility
If amorphous silicon TFT is deformed, then the device can be flexible, but the electrical characteristics become unstable
Solution Approach 1:
The patent changes the material from inorganic amorphous silicon to organic semiconductor single-crystalline material, which has inherent flexibility due to its molecular structure while maintaining stable electrical characteristics through uniform crystal orientation
Solution Approach 2:
Instead of trying to make amorphous silicon stable under deformation, the patent inverts the approach by using organic single-crystalline material that is inherently both flexible and stable, reversing the traditional assumption that crystalline materials are rigid
3Productivity
If amorphous silicon is used in the channel layer, then the manufacturing process is straightforward, but the device speed is limited due to low carrier mobility
Solution Approach 1:
The patent fundamentally changes the material parameter from amorphous silicon to organic semiconductor single-crystalline material, achieving carrier mobility greater than 1 cm²/Vs and enabling high-speed device operation
Solution Approach 2:
The patent applies preliminary action by forming a single-crystalline nucleus first, which then serves as a template for the growth of the entire channel layer, ensuring uniform crystal orientation and high carrier mobility from the outset
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances carrier mobility and stability, allowing for improved performance and flexibility in organic semiconductor devices, overcoming the limitations of amorphous silicon-based devices by reducing the time required to form the single-crystalline channel layer and ensuring uniform crystal orientation.
Implementation Method 1
a temperature processing procedure is performed on the carrier, so that the organic semiconductor solution forms a plurality of sub organic semiconductor single-crystalline nuclei arranged in the same direction as the organic semiconductor single-crystalline nucleus along an edge of the organic semiconductor single-crystalline nucleus
Data Source
AI summary
An organic semiconductor device includes a carrier, a source, a drain, an organic semiconductor single-crystalline channel layer, an organic insulation layer and a gate. The source and the drain are disposed on an upper surface of the carrier. The source and the drain are disposed in parallel and a portion of the carrier is exposed between the source and the drain. The organic semiconductor single-crystalline channel layer is disposed on the upper surface of the carrier and covers a portion of the source, a portion of the drain and the portion of the carrier exposed by the source and the drain. The organic insulation layer covers the carrier, the source, the drain and the organic semiconductor single-crystalline channel layer. The gate is disposed on the organic insulation layer and corresponds to a position of the portion of the carrier exposed by the source and the drain.