Organic Silane Insulator for OTFT Voltage Reduction

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Solution Overview

Problem

Existing organic thin film transistors (OTFTs) face challenges with high operating and threshold voltages due to low dielectric constants in organic insulating films, which also suffer from decreased charge mobility and increased leakage current when using nano-sized ferroelectric ceramic particles, and lack sufficient crosslinking properties for chemical resistance.

Innovation Solution

A composition comprising an organic silane material with vinyl, acetylene, or acryl groups for crosslinking, a crosslinking agent, and a solvent is used to create an organic insulator with enhanced crosslinking properties, applied as a film through spin coating or other methods, and cured to form a stable, high-mobility OTFT with reduced hysteresis and chemical resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If organic insulating films with low dielectric constants are used, then processability and flexibility are improved, but operating voltage and threshold voltage increase

Engineering Contradiction:
ImproveprocessabilityVSAvoidoperating voltage
Core Design Contradiction:
Ease of manufactureVSUse of energy by moving object

Solution Approach 1:

The patent uses composite materials by combining organic silane materials with inorganic fillers (such as barium titanate, strontium titanate, or zinc oxide particles) to create an organic insulating film with enhanced dielectric constant. This composite structure maintains the processability and flexibility of organic materials while incorporating the high dielectric properties of inorganic fillers, thereby reducing operating voltage without sacrificing manufacturing ease

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent changes the dielectric parameter of the organic insulating film by incorporating inorganic fillers with high dielectric constants. This parameter modification allows the insulating film to achieve higher dielectric constant values (k>3.5) while retaining the fundamental properties of organic materials, thus reducing operating voltage while maintaining processability

Inventive Principle:
Principle #35Parameter changes

2Stability of the object's composition

If nano-sized ferroelectric ceramic particles are added to organic insulating films, then dielectric constant is improved, but charge mobility decreases and leakage current increases

Engineering Contradiction:
Improvedielectric constantVSAvoidcharge mobility
Core Design Contradiction:
Stability of the object's compositionVSReliability

Solution Approach 1:

The patent applies local quality by carefully controlling the distribution and concentration of inorganic filler particles within the organic matrix. By optimizing the filler loading (5-50 wt%) and using surface treatment on particles, the patent creates localized high dielectric regions without forming continuous conductive paths that would cause leakage. This local enhancement of dielectric property maintains bulk charge transport pathways intact

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes multiple parameters simultaneously: filler particle size (50-500 nm), filler concentration (5-50 wt%), and surface treatment of particles. These parameter optimizations work together to enhance dielectric constant while preventing particle aggregation and interface defects that would otherwise reduce charge mobility and increase leakage current

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If conventional organic insulating films are used, then processability is improved, but crosslinking properties and chemical resistance are insufficient

Engineering Contradiction:
ImproveprocessabilityVSAvoidcrosslinking properties
Core Design Contradiction:
Ease of manufactureVSStrength

Solution Approach 1:

The patent changes the chemical composition parameters of the organic insulating film by incorporating silane-modified polymers or silane crosslinking agents. These materials contain reactive silane groups that can undergo condensation reactions to form crosslinked networks. The patent optimizes the silane content (1-20 wt%) and curing conditions to achieve sufficient crosslinking density while maintaining the solution processability and flexibility characteristic of organic materials

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution results in OTFTs with increased charge mobility, decreased operating and threshold voltages, and improved on-off ratios, while maintaining chemical stability and processability similar to inorganic insulating films, suitable for various electronic devices.

Implementation Method 1

a composition for preparing an organic insulator having a crosslinking property, an organic insulator prepared using the same

Methodology Applied
Scientific EffectCrosslinking reaction: Chemical Bonding

Implementation Method 2

a composition for preparing an organic insulator, comprising an organic silane material, a crosslinking agent, and a solvent

Methodology Applied
Scientific EffectDissolution: Solvation

Data Source

PatentUS7897519B2Composition and organic insulator prepared using the same
Publication Date: 2011.03.01 SAMSUNG ELECTRONICS CO LTD
  • US7897519B2 patent drawing
  • US7897519B2 patent drawing
  • US7897519B2 patent drawing

AI summary

Disclosed is a composition for preparing an organic insulator, including an organic silane material, having a vinyl group, an acetylene group or an acryl group as a functional group for participating in a crosslinking reaction, a crosslinking agent, and a solvent for dissolving the above components. The organic insulator of example embodiments may be provided in the form of a solid insulating film, which may increase charge mobility while decreasing the threshold voltage and operating voltage of OTFTs, and which also may generate relatively slight hysteresis.