Organic Solvent Developer with Nitrogen Compound for Lithography
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Solution Overview
Problem
Current methods for forming fine resist patterns in lithography face challenges in achieving sufficient optical contrast and reducing line width, particularly when using alkaline aqueous solutions, which result in poor film formation and increased film loss during development.
Innovation Solution
A pattern-forming method utilizing a photoresist composition with a polymer containing an acid-labile group and a photoacid generator, developed using a negative developer that includes an organic solvent and a nitrogen-containing compound, which enhances dissolution contrast and reduces film loss in the exposed areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If an alkaline aqueous solution is used as the developer, then the development process is simple and cost-effective, but the optical contrast is poor resulting in increased line width roughness and film loss
Solution Approach 1:
The patent changes the chemical composition parameters of the developer by incorporating a nitrogen-containing compound (such as ammonia or amine) into the organic solvent-based developer. This parameter change improves the dissolution contrast and reduces line width roughness while maintaining the benefits of organic solvent development, thereby resolving the contradiction between process simplicity and manufacturing precision.
2Ease of operation
If an alkaline aqueous solution is used as the developer, then the process is straightforward, but film loss in exposed areas increases
Solution Approach 1:
The patent modifies the developer composition by adding a nitrogen-containing compound to the organic solvent system, which changes the dissolution characteristics. This parameter change reduces film loss in exposed areas by improving the selectivity and control of the development process, while keeping the operation straightforward.
3Length of moving object
If the line width of the resist pattern is reduced for miniaturization, then the structure size decreases, but the optical contrast requirement increases making fine pattern formation difficult
Solution Approach 1:
The patent changes the developer system from alkaline aqueous to organic solvent-based with nitrogen-containing compounds, which provides superior optical contrast. This parameter change enables the formation of fine resist patterns with reduced line width while maintaining high manufacturing precision and clear pattern definition.
Data Source
AI summary
A pattern-forming method includes forming a resist film on a substrate using a photoresist composition, exposing the resist film, and developing the exposed resist film using a negative developer that includes an organic solvent. The photoresist composition includes (A) a polymer that includes a structural unit (I) including an acid-labile group that dissociates due to an acid, the solubility of the polymer in the developer decreasing upon dissociation of the acid-labile group, and (B) a photoacid generator. The developer includes a nitrogen-containing compound.