Organic Thin Film Transistor Substrate Imprint Manufacturing

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Solution Overview

Problem

The manufacturing of organic thin film transistor (TFT) substrates is lengthy and costly due to the reliance on mask processes, particularly the photolithography process, which becomes more expensive as substrate sizes increase and pattern sizes decrease.

Innovation Solution

The use of an imprint method to form organic TFT substrates without masks, involving the formation of gate and data metal patterns, bank-insulating layers, and pixel electrodes using imprint molds with stepped heights, and the application of organic semiconductor and protective layers through inkjet processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If photolithography process is used to form patterns, then manufacturing precision can be achieved, but manufacturing time increases and costs increase

Engineering Contradiction:
Improvepattern precisionVSAvoidmanufacturing time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent extracts and eliminates the photolithography process from the manufacturing sequence, replacing it with direct imprinting methods that form patterns without requiring photoresist deposition, mask alignment, exposure, and stripping steps, thereby reducing manufacturing time while maintaining pattern precision

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent uses imprint molds that directly copy the desired pattern geometry onto the substrate through physical contact or proximity, eliminating the need for photolithographic pattern transfer and significantly shortening the pattern formation process while preserving manufacturing precision

Inventive Principle:
Principle #26Copying

2Manufacturing precision

If photolithography process is used to form patterns, then manufacturing precision can be achieved, but manufacturing cost increases

Engineering Contradiction:
Improvepattern precisionVSAvoidmanufacturing cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent removes the expensive photolithography equipment and materials (photoresist, masks, stripping solutions) from the manufacturing process, replacing them with simpler imprinting techniques that achieve comparable precision at lower cost

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent employs disposable or reusable imprint molds that can be manufactured at lower cost compared to photolithography masks, eliminating the need for expensive mask sets and photoresist materials while maintaining pattern formation capability

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Reliability

If substrate size increases and pattern size decreases, then device performance improves, but photolithography cost increases

Engineering Contradiction:
Improvedevice performanceVSAvoidphotolithography cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent divides the substrate into multiple regions and uses segmented imprint molds or multi-step imprinting processes to efficiently handle large substrates with fine patterns, avoiding the cost escalation associated with scaling photolithography for large-area high-resolution patterning

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent uses high-resolution imprint molds that can directly copy complex patterns at reduced sizes across large substrate areas without the cost penalties of scaled photolithography processes, achieving both improved device performance and cost efficiency

Inventive Principle:
Principle #26Copying

Data Source

PatentUS7858434B2Organic thin film transistor substrate and method of manufacturing the same
Publication Date: 2010.12.28 HYDIS TECH CO LTD
  • US7858434B2 patent drawing
  • US7858434B2 patent drawing
  • US7858434B2 patent drawing

AI summary

An organic thin film transistor substrate includes a substrate, a gate line on a surface of the substrate, a gate insulating layer insulating on the gate line, a data line on the gate insulating layer, an organic thin film transistor connected to the gate line and the data line, the organic thin film transistor including an organic semiconductor layer, a bank-insulating layer positioned at least in part on the data line, the bank-insulating layer including a wall portion which defines a pixel area, and a pixel electrode formed in the pixel area.