Organic Thin Film Transistor With Segmented Gate Lines
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Solution Overview
Problem
Organic thin film transistors suffer from reliability issues due to degradation in ON/OFF characteristics and modulation failure caused by repeated voltage application, leading to insufficient durability.
Innovation Solution
A thin film transistor design featuring multiple gate lines with independent channels and a gate insulating layer, allowing for channel formation and switching between gate lines to maintain initial characteristics, and controlling driving current by varying channel length and width.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single gate line is used in an organic thin film transistor, then the device structure is simple, but the ON/OFF characteristics deteriorate after repeated voltage application
Solution Approach 1:
The gate line is divided into multiple independent gate lines (first gate line, second gate line, third gate line) that extend in different directions. Each gate line can be independently controlled and forms independent channels with the source and drain electrodes, allowing the transistor to switch between different conduction paths to maintain reliability.
2Productivity
If voltage is continuously applied to one gate line, then the transistor operates continuously, but the organic semiconductor layer deteriorates
Solution Approach 1:
The transistor operates by periodically switching between multiple gate lines. Instead of continuously applying voltage to a single gate line, the system alternates between first, second, and third gate lines, allowing each gate line and its associated organic semiconductor layer to rest and recover, thereby extending the overall operational lifetime.
3Power
If the gap between source electrode and drain electrode is reduced to increase driving current, then the current increases, but the channel length control becomes more difficult
Solution Approach 1:
Different gate lines are configured with different gap distances between the source and drain electrodes. The first gate line has a first gap distance, the second gate line has a second gap distance, and the third gate line has a third gap distance. This allows each gate line to provide different driving currents, enabling flexible control of power output while maintaining manufacturable channel lengths.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the reliability and durability of organic thin film transistors by allowing for normal operation even when one gate line deteriorates, and reduces unit driving time, thereby improving the overall performance and longevity of the transistors.
Implementation Method 1
when a predetermined voltage value is applied to the gate lines, independent channels are induced in portions of the organic semiconductor layer which are overlapped with the gate lines
Data Source
AI summary
A thin film transistor includes a source electrode and a drain electrode which are disposed to face each other, an organic semiconductor layer provided at least between the source electrode and the drain electrode, a plurality of gate lines extending over the source electrode, the organic semiconductor layer, and the drain electrode, and a gate insulating layer interposed between the source electrode, the drain electrode, and the organic semiconductor layer and the plurality of gate lines.