Organic Transistor Element With Current Transmission Promotion Layer
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Solution Overview
Problem
Current organic transistor elements face challenges in achieving large current modulation, high amplification factor, and stable operation under low voltage, particularly for driving organic EL displays, due to difficulties in forming intermediate electrodes and maintaining low OFF currents, limited material options, and complex production processes.
Innovation Solution
A transistor element with a laminated structure featuring a sheet-like base electrode, p-type organic semiconductor layers on both surfaces, and current transmission promotion layers made of alkali metal compounds or lithium fluoride, which enhances current transmission and reduces OFF currents, allowing for large current modulation and high amplification.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a vertical type transistor structure is used to achieve short channel length and large current, then current modulation capability is improved, but manufacturing precision and ease of manufacture deteriorate due to difficulty in forming intermediate electrodes
Solution Approach 1:
The patent introduces a current transmission promotion layer as an intermediary between the base electrode and organic semiconductor layers. This layer mediates the interaction between the electrode and semiconductor, promoting current transmission without requiring complex intermediate electrode structures. The layer is formed by simple vacuum deposition of materials like lithium fluoride, alkali metal compounds, or alkaline earth metal compounds, avoiding the need for precise striped intermediate electrode patterning.
Solution Approach 2:
The patent changes the material parameters and structural configuration by placing organic semiconductor layers on both surfaces of the base electrode with current transmission promotion layers in between. This parameter change in structure and material composition enables large current modulation and high amplification factor without requiring difficult-to-form intermediate electrodes, thus resolving the manufacturing precision issue while maintaining productivity.
2Adaptability or versatility
If conventional organic transistor structures are used, then material options and production processes are limited, but current amplification factor and ON/OFF ratio deteriorate
Solution Approach 1:
The patent segments the transistor structure into distinct functional layers: base electrode, current transmission promotion layer, and organic semiconductor layers on both surfaces. This segmentation allows independent optimization of each layer's material and thickness, providing versatile material options while ensuring reliable current amplification and ON/OFF ratios through proper layer design.
Solution Approach 2:
The patent employs composite material structures combining inorganic current transmission promotion materials (lithium fluoride, alkali metal compounds, alkaline earth metal compounds) with organic semiconductor materials. This composite approach leverages the advantages of both material types, achieving high current amplification factor and ON/OFF ratio while maintaining flexibility in material selection and production methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables stable large current modulation and high ON/OFF ratios, facilitating the use of organic transistor elements in organic EL displays and other electronic devices with improved efficiency and reduced production complexity.
Implementation Method 1
a current transmission promotion layer which promotes transmission of current between the base electrode and the organic semiconductor layers
Data Source
AI summary
The present invention provides a transistor element having a laminated structure, the laminated structure comprising a sheet-like base electrode being arranged between an emitter electrode and a collector electrode; at least one p-type organic semiconductor layer being provided on each of the surface and the back sides of the base electrode; and a current transmission promotion layer being formed, on each of the surface and back sides of the base electrode, between the base electrode and the p-type organic semiconductor layer or layers provided on each of the surface and back sides of the base electrode. According to the present invention, it becomes possible to provide a transistor element (MBOT) that is, in particular, stably supplied through a simple production process, has a structure capable of being mass-produced, and has a large current modulation effect and an excellent ON/OFF ratio at a low voltage in the emitter electrode and the collector electrode.