Organic Transistor Interface Layer for Solvent Protection
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Solution Overview
Problem
The challenge lies in manufacturing electronic devices with organic opto-electronic components and field-effect transistors on the same support, as organic materials are fragile and prone to degradation due to solvent interactions during the manufacturing process, leading to performance issues.
Innovation Solution
The solution involves forming opto-electronic components and field-effect transistors directly on the same support using a structure with specific layers, including a high electrical resistance interface layer between the semiconductor portion and the gate, made of materials like zinc oxide or titanium oxide, to protect the semiconductor layers and prevent short circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If organic optoelectronic components and field-effect transistors are fabricated on the same substrate, then device integration and manufacturing efficiency are improved, but organic material degradation occurs due to solvent interactions during manufacturing
Solution Approach 1:
The patent introduces an interface layer composed of inorganic materials (such as aluminum oxide, silicon oxide, or titanium oxide) between the organic semiconductor layer and the gate electrode. This interface layer acts as a mediator that protects the fragile organic semiconductor from degradation caused by solvent interactions during the fabrication of subsequent layers, while still allowing effective electrical contact and device operation. The interface layer has high electrical resistance to prevent short circuits and maintains the integrity of the organic materials.
2Reliability
If a high electrical resistance interface layer is introduced between the semiconductor portion and the gate, then transistor performance is improved by preventing short circuits, but device structure complexity increases
Solution Approach 1:
The interface layer is applied locally only where needed - specifically at the critical interface between the organic semiconductor portion and the gate electrode - rather than throughout the entire device structure. This localized application provides the necessary electrical isolation and protection precisely where solvent interactions and short circuit risks occur, while leaving other parts of the device structure simple and maintaining overall manufacturing efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the performance of the field-effect transistors by reducing degradation and improving electrical conduction, allowing for the production of robust and efficient organic electronic devices.
Implementation Method 1
the electrical resistance of the third layer is greater than or equal to 10 9
Implementation Method 2
a fourth dielectric layer interposed between the third layer and the first grid
Data Source
Figure 1~3D
Figure 3E~5
Figure 6~7B
AI summary
The invention relates to an electronic device (10) which includes: at least one optoelectronic component (PH) including a first active layer (30), a first electrode (14), and a second interface layer (32) between the first layer and the first electrode; and at least one first field effect transistor (M1) including a first semiconductor portion (18), a first gate (42), and at least one third layer (33), between the first gate and the first semiconductor portion. The third layer is made of the same material as the second layer. The electronic device includes a second electrode (36) and a fourth interface layer (34) between the first layer (30) and the second electrode and includes a second field effect transistor (M2) that includes a second semiconductor portion (24), a second gate (44), and at least one fifth layer (35) between the second gate and the second semiconductor portion. The fifth layer is made of the same material as the fourth layer.