Solid-State Devices TRIZ Cases

A shield electrode reduces parasitic capacitance between the OLED anode and drive transistor gate, maintaining stable current supply for consistent brightness.

Segmented reflective layers guide current via resistance differentiation and suppress transients to improve thermal conductivity and reliability.

Multi-height protruding tips in a substrate groove disconnect organic encapsulation layers to prevent moisture penetration into the display area.

A second conductive layer diffusely reflects external light to increase display brightness and contrast.

A semiconductor device stacks a ferroelectric layer implementing negative capacitance with an alternating dielectric structure to boost total capacitance.

Merging the baseplate with encapsulation reduces device thickness while maintaining moisture resistance for outdoor durability.

A flexible CMOS library architecture uses gate-isolation and varied channel lengths to reduce leakage current in integrated circuits.

Merges storage cell and logic device fabrication into a unified flow, reducing photomask counts and costs while maintaining precision.

Shielding lines between wordlines and selection lines apply voltages to block electrical interference during programming operations.

Adjusting oxygen nitrogen ratios in the crystal lattice stabilizes emission intensity against thermal degradation and hydrolysis.

A spray nozzle and cell electrodes guide charged droplets to precise substrate locations.

Segmented bank layers with stepped thickness profiles control ink distribution uniformity while preventing electrode short circuits.

A thin film transistor incorporates a mobility enhancement layer to boost carrier mobility through specific material composition.

A thin film encapsulation layer blocks moisture and oxygen using composite inorganic materials.

Segmented resistance variable patterns enable multi-bit storage in phase-change memory cells.

Vacuum through holes in a transfer support attract LEDs onto platforms, resolving epitaxial growth quality issues during multi-color micro-display assembly.

Low in-plane retardation eliminates birefringence errors and precise alignment needs for fingerprint recognition.

Acute triangle protective contact arrangement in trench MOSFETs mitigates short-circuit current concentration while maintaining low on-resistance.

Laser treatment bonds spacers to the transparent wafer, eliminating bow distortion and interlayer misalignment caused by thermal expansion differences.

Moving electrodes transport ink droplets into sub-pixel grooves, eliminating color films to reduce power consumption while achieving high pixel density.

A quantum dot light emitting element uses water-alcohol soluble conjugated polymers in the electron transport layer to transmit electrons efficiently.

Controller manages grain boundary density in chalcogenide variable resistance layers to stabilize electrical characteristics.

Signal blocking metal wirings isolate electrode regions in OLED displays, cutting power during shorts to inhibit local burning and defects.

Piezoelectric stress modifies magnetic anisotropy in the recording layer, reducing write power while maintaining data stability.

Controlling photolithography mask thickness and exposure uniformity reduces critical dimension deviations in array substrates.

Floating layer in PN junction diode enhances reverse breakdown voltage while suppressing element area growth.

Combining conductive and scattering particles in a substrate electrode resolves the trade-off between electrical conductivity and light outcoupling efficiency.

A flat panel display uses a meta-lens system to convert incident light into parallel beams for personal immersion viewing.

A transparent organic light-emitting display device uses a black bank to absorb external light, resolving reflection issues without losing transparency.

Replacing RC detection with a diode string removes gate leakage current while reducing layout area by one-sixth compared to traditional designs.

Localizing quantum dots in hollowed regions reduces material costs and eliminates color deviation from repeated light passage.

Metal oxide particles in a hydrophobic matrix scavenge moisture to prevent OLED degradation and maintain device efficiency.

Segmented common electrodes reduce signal transmission delay while a cover layer prevents passivation over-etching during precise pattern formation.

An organic field effect transistor uses a high resistance interface layer between the gate and semiconductor portion to prevent short circuits.

Gate electrode modulates electric field perpendicular to current flow, resolving nonlinear filament growth that limits deep neural network simulation accuracy.

Serial pn-junctions sum light emission intensities to boost output power without increasing current supply, extending device duration.

A light emitting element uses a reflector disposed under a transparent electrode to control optical extraction within the defined region.

Auxiliary gate electrode and switching gate electrode control electron and hole current distribution to minimize brightness differences across display area.

Pre-formed sheet phosphor layers ensure uniform white light emission while reflective encapsulating resin minimizes absorption losses.

A thin film transistor uses a metal layer as an ion implantation mask to form conductive portions in the oxide semiconductor active layer.

A variable resistance material layer uses germanium, antimony, tellurium, and impurities to enhance crystallization rates.

A three-dimensional semiconductor memory device divides bit lines into sections separated by source line pads to increase integration density.

Symmetrical sub-pixel arrangement enables shared mask openings for red and green light emitting layers.

Placing RF circuit elements within standard cell arrays minimizes surface area usage and improves lithography processes.

Variable width gate lines merge non-display regions into active areas to increase light transmittance in liquid crystal displays.

A flexible display device uses a metal base film under the display area to secure structural integrity and maintain a bent shape.

Thermal treatment reduces nitrogen content in tunneling layers, expanding the process window and enhancing data retention.

Vertical stacking of transistor arrays above memory layers reduces manufacturing complexity and cost while increasing memory density.

A graphene layer and pressure sensitive adhesive secure a macromolecule film to the display panel.