Series-Connected PN-Junctions for High Light Output
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Solution Overview
Problem
Conventional semiconductor light emitting devices face a challenge in achieving high light emitting output power without increasing the supplied current, as higher current levels lead to shorter device duration.
Innovation Solution
The semiconductor apparatus features a substrate with multiple semiconductor thin films, each having a pn-junction, where all or part of the pn-junctions are connected serially to enhance light emission intensity, allowing for increased light output without increasing the current supply by summing the light emission intensities of connected pn-junctions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the supplied current is increased to increase light emitting power, then the light emitting output power is improved, but the device duration rapidly becomes short
Solution Approach 1:
The invention divides a single light emitting device into multiple semiconductor light emitting devices with individual pn-junctions connected in series. Each pn-junction emits light independently, and the total light output is the summation of all individual pn-junction emissions. This segmentation allows the device to achieve high light emitting power without increasing the supplied current, as the same current flows through all series-connected junctions, each contributing to the total light output.
2Illumination intensity
If multiple semiconductor thin films are connected serially to increase light emitting intensity, then the light emitting intensity is improved, but the device complexity increases
Solution Approach 1:
The invention merges multiple semiconductor thin films with pn-junctions into a single integrated structure where all junctions are connected in series between two electrodes. This merging approach allows the multiple light emitting elements to function as a unified device, achieving high light emitting intensity while managing complexity through integrated design rather than separate components.
Solution Approach 2:
The invention transitions from a single-planar pn-junction structure to a multi-layer stacked configuration where semiconductor thin films are arranged in series. This dimensional change from two-dimensional to three-dimensional stacking allows multiple pn-junctions to be connected serially within a compact vertical structure, increasing light emitting intensity without proportionally increasing device footprint or complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly increases light emitting intensity while maintaining a lower current supply, enabling a more efficient and compact semiconductor apparatus with improved light emitting performance.
Implementation Method 1
a current is fed between the p-type electrode and the n-type electrode to the semiconductor thin films overlapped on the substrate to emit, from an upper side of the semiconductor thin film in an overlapping direction, light produced at the pn-junctions by carrier injection
Data Source
AI summary
A semiconductor apparatus includes a substrate; and a plurality of semiconductor thin films formed on said substrate, each of said semiconductor thin films having a pn-junction, and electrodes of p-type and n-type for injecting carriers to the pn-junction, wherein said semiconductor thin films are formed so that all or a part of said pn-junctions are connected serially. As different from a semiconductor thin film constituted of a single pn-junction, the light emission with the invented semiconductor apparatus is the summation of the light emission intensities of the entire pn-junctions, so that the light emitting intensity can be increased largely.