Quantum Dot Thin Film via Metal Complex Solution
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Solution Overview
Problem
Conventional methods for manufacturing quantum dot light-emitting diode (QLED) displays face challenges in achieving high efficiency due to suboptimal film formation of quantum dot thin films, which affects the display's performance and increases costs.
Innovation Solution
A method involving the use of a metal complex solution, prepared by dissolving a metal complex M-(XCH2COO−H3N+CH2CH2OH)2 in a non-polar solvent, is applied to form a quantum dot thin film, with specific steps including substrate preparation, layer formation, and precise control of process parameters to simplify the process and reduce costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to form quantum dot thin films by dissolving quantum dot material in solvent, then the film formation process is simple, but the film quality is suboptimal which reduces device efficiency
Solution Approach 1:
The patent changes the chemical parameters of the solution system by using metal complexes dissolved in non-polar solvents instead of conventional quantum dot materials in polar solvents. This parameter change enables high-quality film formation while maintaining process simplicity, as the metal complexes can be processed using standard solution-based techniques.
Solution Approach 2:
The patent introduces metal complexes as intermediary substances that serve as precursors to quantum dots. These metal complexes act as mediators between the solution processing method and the final quantum dot film, enabling high-quality film formation through solution casting while the quantum dots form in-situ during or after the film formation process.
2Reliability
If quantum dot material is dissolved in solvent to prepare thin film, then the process is straightforward, but specific characteristics of size and surface property lead to non-ideal film formation which reduces device efficiency
Solution Approach 1:
The patent changes the size and surface property parameters by using metal complexes with controlled molecular structures. The metal complexes provide uniform size and surface characteristics that enable ideal film formation, improving device efficiency without requiring complex control of quantum dot parameters.
Solution Approach 2:
The patent performs preliminary action by pre-synthesizing metal complexes with desired properties before the film formation process. This preliminary preparation of metal complexes with controlled size and surface properties ensures that the subsequent film formation process proceeds smoothly without requiring complex real-time parameter control.
3Manufacturing precision
If conventional quantum dot film formation methods are used, then the process is simple, but the luminescence spectrum control is limited affecting display quality
Solution Approach 1:
The patent enables precise luminescence spectrum control by changing the chemical composition parameters of the metal complexes. By selecting different metal elements and ligand structures, the luminescence spectrum can be precisely tuned across the visible range, while the solution-based processing maintains ease of manufacture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the formation of high-quality quantum dot thin films with adjustable luminescence spectra, reducing costs and improving display efficiency by enabling precise control of sub-pixel levels, thus enhancing the overall display quality and process simplicity.
Implementation Method 1
dropping the metal complex solution on the hole transport layer in each of the through-holes, obtaining a quantum dot thin film after heating and drying
Implementation Method 2
A carrier fluctuation goes considerable with a size of a semiconductor material turning from a bulk phase to a critical dimension (1 nm ̃20 nm), movement will be restricted, which leads to an increase in kinetic energy, a corresponding electronic structure turns from an energy level structure of a bulk phase continuity to a discontinuity of quasi fission, the phenomenon is called a quantum size effect
Implementation Method 3
obtaining a quantum dot thin film after heating and drying
Data Source
AI summary
The disclosure provides a manufacture method of a quantum dot light-emitting diode display and a quantum dot light-emitting diode display. The manufacture method of a quantum dot light-emitting diode display provided by the disclosure forms a light-emitting layer by a quantum dot thin film prepared by filming a metal complex solution, compared with a conventional ink jet printing method with quantum dot ink, process parameters can be adjusted easily, a process can be simple, costs can be reduced, three primary colors R, G, B can be adjusted by precisely controlling sub pixel levels, a color film can be omitted, which can be a better industrial design in weight and thickness. According to the quantum dot light-emitting diode display provided by the disclosure, the light-emitting layer is formed by a quantum dot thin film, which can offer the quantum dot light-emitting diode display excellent quality in display, the process is simple.