Organoindium EUV Photoresist Patterning for Thin-Layer Etch Resistance

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Current EUV lithography lacks a photoresist material that simultaneously meets the criteria of high sensitivity, resolution, low line-edge roughness, and etch resistance for forming smaller integrated circuits.

Innovation Solution

A method involving the deposition of an underlayer and an EUV photoresist layer comprising indium-based compounds, followed by pretreatment and exposure to treatment gases to form a patterned photoresist layer, utilizing atomic layer deposition (ALD), plasma enhanced ALD (PEALD), chemical vapor deposition (CVD), or plasma enhanced CVD (PECVD) processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional photoresist materials are used in EUV lithography, then the lithographic process can be performed, but the material cannot simultaneously achieve high sensitivity, high resolution, low line-edge roughness, and high etch resistance

Engineering Contradiction:

Improvephotoresist performanceVSAvoidmaterial property compatibility

Core Design Contradiction:

ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent employs composite photoresist materials consisting of multiple components including organoindium compounds, organic compounds with specific functional groups, and metal oxides or metal organic compounds. This composite approach allows the material to simultaneously achieve high sensitivity, resolution, low line-edge roughness, and etch resistance by combining the beneficial properties of different materials

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The patent systematically varies multiple material parameters including the types of organoindium compounds, organic compounds with different functional groups (carboxylic acid, phenolic hydroxyl, sulfonic acid), metal oxides, and their respective ratios and concentrations. These parameter changes enable optimization of all required properties simultaneously

Inventive Principle:

Principle #35Parameter changes

2Manufacturing precision

If the photoresist layer thickness is reduced to form smaller features, then resolution improves, but etch resistance deteriorates

Engineering Contradiction:

Improvefeature sizeVSAvoidetch resistance

Core Design Contradiction:

Manufacturing precisionVSStrength

Solution Approach 1:

The composite photoresist formulation includes etch-resistant metal oxide components and organoindium compounds that provide both the sensitivity required for sub-10nm feature formation and sufficient etch resistance to maintain pattern integrity during subsequent etching processes, even at reduced thicknesses

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The patent creates different local properties within the photoresist layer through the use of multiple components with different functions - some components provide sensitivity for pattern formation while others provide etch resistance, allowing the material to exhibit different properties in different contexts within the same layer

Inventive Principle:

Principle #3Local quality

3Productivity

If the photoresist layer thickness is reduced to increase efficiency, then the lithographic process efficiency improves, but etch resistance deteriorates

Engineering Contradiction:

Improvelithographic process efficiencyVSAvoidetch resistance

Core Design Contradiction:

ProductivityVSStrength

Solution Approach 1:

The multi-component composite system enables thinner photoresist layers to maintain adequate etch resistance by incorporating metal oxides and organoindium compounds that provide both sensitivity and etch resistance, thereby improving overall process efficiency without sacrificing pattern transfer capability

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the formation of ultrathin, high-performance EUV photoresist layers with improved sensitivity, resolution, and etch resistance, facilitating the development of smaller integrated circuits.

Implementation Method 1

photoresist materials are radiation sensitive and able to undergo a chemical transformation upon exposure to electromagnetic radiation

Methodology Applied

Scientific EffectAbsorption (EM radiation): Absorption (EM radiation)

Implementation Method 2

exposing the pretreated EUV photoresist layer to a treatment gas to form a treated EUV photoresist layer, wherein the exposure of the pretreated EUV photoresist are exposed to electromagnetic radiation

Methodology Applied

Scientific EffectChemical reaction: Chemical Bonding

Data Source

PatentUS20250347996A1Apparatus and method of patterning a substrate using an organoindium resist

Publication Date: 2025.11.13 APPLIED MATERIALS INC

AI summary

Embodiments of the disclosure include a method for preparing a photoresist structure. The method comprising: depositing an underlayer onto a substrate; depositing an EUV photoresist layer onto the underlayer, the EUV photoresist layer comprising at least one indium-based compound; pretreating the EUV photoresist layer to form a pretreated EUV photoresist layer; exposing the pretreated EUV photoresist layer to a treatment gas to form a treated EUV photoresist layer, wherein the exposure of the pretreated EUV photoresist layer to the treatment gas is performed after a plurality of regions of the pretreated EUV photoresist are exposed to electromagnetic radiation; and exposing the treated EUV photoresist layer to a developer gas to form a patterned photoresist layer.