Organometallic Resist Composition for Low-Diffusion Patterning
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Solution Overview
Problem
Chemically amplified resists used in semiconductor manufacturing face issues with acid diffusion leading to non-uniform patterns and increased surface roughness, and they degrade in normal usage environments, necessitating improved storage stability and resolution.
Innovation Solution
A resist composition comprising an organometallic compound and a polar aprotic solvent, which changes physical properties upon low-intensity light exposure, minimizing acid diffusion and maintaining chemical stability, thereby forming precise patterns without chemical deterioration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chemically amplified resists are used to form fine patterns, then patterning capability is enabled, but acid diffusion occurs leading to non-uniform patterns and increased surface roughness
Solution Approach 1:
The patent extracts and eliminates the chemically amplified mechanism (photoacid generator and base resin system) that causes acid diffusion. Instead, it uses a direct photochemical resistance change mechanism where the resist material itself undergoes solubility change upon light exposure, removing the source of harmful acid diffusion while preserving patterning capability
Solution Approach 2:
The patent introduces a photoacid generator that remains confined within the exposed region and acts as a localized mediator. This photoacid generator generates acid only where light is applied, and the acid immediately reacts with a base compound in the same region to form a soluble complex, preventing diffusion to unexposed areas while enabling controlled solubility change
2Manufacturing precision
If chemically amplified resists are used for patterning, then resolution can be achieved, but chemical deterioration occurs in normal usage environments
Solution Approach 1:
The patent changes the chemical parameters of the resist system by using a base resin with specific pKa value (3.5-6.5) and combining it with a photoacid generator having controlled acid strength. This parameter optimization allows the resist to remain stable during storage (neutral conditions) while enabling rapid, controlled reaction upon light exposure, achieving both high resolution and storage stability
3Manufacturing precision
If conventional resists are used, then patterning can be formed, but surface roughness increases due to acid diffusion
Solution Approach 1:
The patent applies local quality by confining all chemical reactions to the exact region where light is applied. The photoacid generator, base compound, and resulting soluble complex are all localized to the exposed area, ensuring that only the exposed region undergoes solubility change. This localized reaction prevents lateral propagation of chemical changes that would cause surface roughness, while maintaining uniform pattern formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves improved storage stability and pattern uniformity by reducing acid diffusion, maintaining chemical integrity, and enabling high-resolution pattern formation even with low-intensity light exposure.
Implementation Method 1
a resist composition which has improved storage stability, wherein the resist composition is configured to change one or more physical properties even by exposure to incident light at a low dose (e.g., exposure to a small amount and/or intensity of light)
Implementation Method 2
a solvent including a polar aprotic solvent
Data Source
AI summary
Provided are a resist composition and a method of manufacturing a pattern by using the same, the resist film including an organometallic compound represented by Formula 1, and a solvent including a polar aprotic solvent:wherein R11, R12, and n in Formula 1 are as defined in the specification.