Organotin Oxide Hydroxide Resists for High-Resolution EUV Patterning
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Solution Overview
Problem
Existing patterning technologies for semiconductor and electronic devices face challenges in achieving high-resolution patterns with low line width roughness and require complex processing steps due to solubility and stability constraints of organotin oxide hydroxide precursors, limiting their practical application in micro- and nanofabrication.
Innovation Solution
The use of in situ hydrolysis of precursor compositions comprising organometallic compounds with hydrolysable ligands and metal compounds, allowing for the formation of organotin oxide hydroxide coatings that can be patterned with UV, EUV, or electron-beam radiation, and enabling vapor deposition methods to overcome solubility and stability constraints.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If organotin oxide hydroxide precursors are used for patterning, then high-resolution patterns with low line width roughness can be achieved, but solubility and stability constraints limit their practical application
Solution Approach 1:
The patent changes the chemical parameters of the precursor composition by incorporating metal compounds with hydrolysable ligands that react to form organotin oxide hydroxide in situ. This parameter change transforms the precursor system from one with solubility and stability constraints to one that overcomes these constraints through controlled hydrolysis reactions, enabling high-resolution patterning while simplifying processing.
Solution Approach 2:
The patent introduces metal compounds with hydrolysable ligands as intermediary substances that serve as precursors to organotin oxide hydroxide. These intermediaries undergo hydrolysis reactions to form the active patterning material, bypassing the solubility and stability issues associated with direct use of organotin oxide hydroxide precursors while maintaining the ability to form high-resolution patterns.
2Reliability
If complex processing steps are used to overcome solubility and stability constraints, then organotin oxide hydroxide patterning can be achieved, but processing efficiency is reduced
Solution Approach 1:
The patent merges the precursor deposition and organotin oxide hydroxide formation steps into a single integrated process. By using metal compounds with hydrolysable ligands that undergo in-situ hydrolysis, the method combines what would otherwise be separate processing steps (precursor application, drying, and hydrolysis treatment) into one streamlined workflow, improving processing efficiency while maintaining reliable patterning performance.
Solution Approach 2:
The patent performs preliminary preparation of metal compound precursors with hydrolysable ligands that are designed to undergo controlled hydrolysis. This preliminary action ensures that the precursors are pre-configured to form organotin oxide hydroxide under processing conditions, eliminating the need for complex post-deposition processing steps and improving overall processing efficiency while ensuring reliable patterning.
3Adaptability or versatility
If a wider range of compositions and stoichiometries are used in resist films, then film quality and processing efficiency are improved, but solubility and stability constraints are violated
Solution Approach 1:
The patent changes the compositional parameters by using metal compounds with hydrolysable ligands as precursors, which enables a wider range of compositions and stoichiometries in the final organotin oxide hydroxide resist films. The hydrolysis process transforms stable precursor compounds into the desired resist compositions, allowing versatile film composition control while maintaining precursor stability during storage and handling.
Solution Approach 2:
The patent performs preliminary configuration of precursors with controlled composition and stoichiometry ratios before deposition. By pre-configuring the metal compound precursors with specific ligand ratios and compositions, the method enables versatile resist film compositions to be achieved after hydrolysis, while the precursors themselves remain stable and handleable under standard conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables high-resolution patterning with low line width roughness and reduced radiation doses, improving processing efficiency and film quality by relaxing solubility and stability constraints, and allowing for a wider range of compositions and stoichiometries in the resist films.
Implementation Method 1
in situ hydrolysis of precursor compositions comprising organometallic compounds with hydrolysable ligands and metal compounds, allowing for the formation of organotin oxide hydroxide coatings
Implementation Method 2
enabling vapor deposition methods to overcome solubility and stability constraints
Implementation Method 3
patterned effectively with UV light, EUV light or electron-beam radiation to form high resolution patterns
Data Source
AI summary
Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.