Organotin Metal-Containing Film Composition for Etch-Resistant Planarization
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Solution Overview
Problem
Existing resist materials face challenges in achieving high sensitivity, low edge roughness, and compatibility with EUV lithography, while metal-containing resist materials suffer from insufficient storage stability, thermal shrinkage, and poor filling and planarizing properties.
Innovation Solution
A tetravalent organotin compound represented by the general formula (M) is used to form a metal-containing film, which includes specific organic groups for improved solvent solubility, thermosetting property, and thermal flowability, enhancing dry etching resistance, filling, and planarizing capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If metal-containing resist materials are used to improve sensitivity and suppress shot noise, then photosensitivity is improved, but storage stability deteriorates
Solution Approach 1:
The patent introduces a metal-containing underlayer film as an intermediary between the substrate and the resist upper layer film. This underlayer film contains metal elements (Ti, Hf, Zr, or Sn) that enhance EUV light absorption and sensitivity, while the resist upper layer remains organic and maintains good storage stability. The metal-containing layer acts as a mediator that provides the sensitivity enhancement without compromising the stability of the resist material.
2Strength
If metal compound is used for resist underlayer film to improve dry etching resistance, then etching resistance is improved, but filling property deteriorates due to thermal shrinkage
Solution Approach 1:
The patent carefully controls the metal compound content in the underlayer film to be within a specific range (0.1-10 wt%, preferably 0.5-5 wt%). By optimizing this parameter, the film achieves sufficient dry etching resistance while minimizing thermal shrinkage during baking. The controlled composition allows the film to maintain good filling properties (volume retention) while providing the necessary etching resistance for the patterning process.
3Strength
If metal compound is used for resist underlayer film to improve dry etching resistance, then etching resistance is improved, but planarizing property deteriorates
Solution Approach 1:
The patent optimizes the metal compound content parameter to balance etching resistance and planarizing properties. By maintaining the metal compound within 0.1-10 wt% (preferably 0.5-5 wt%), the underlayer film achieves adequate dry etching resistance while preserving its ability to fill and planarize the substrate surface. This parameter control prevents excessive thermal shrinkage that would otherwise degrade the planarizing capability.
4Manufacturing precision
If multiple exposure processes are used to form narrow-pitch patterns, then pattern resolution is improved, but productivity deteriorates
Solution Approach 1:
The patent extracts the metal-containing layer from the resist composition and places it in a separate underlayer film. This extraction allows the resist upper layer to be processed with standard ArF immersion lithography in a single exposure, eliminating the need for multiple exposure and etching cycles. The metal-containing underlayer provides the necessary sensitivity enhancement and etching resistance, enabling direct single-step patterning of narrow-pitch features.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compound provides a resist material with excellent dry etching resistance, high filling and planarizing properties, and reduced volume shrinkage during baking, enabling precise fine pattern formation in semiconductor manufacturing.
Implementation Method 1
molecules containing tin are excellent in the absorption of an electron beam and an extreme ultraviolet ray
Implementation Method 2
alkyl ligand is dissociated by light absorption or secondary electrons produced thereby and crosslinked with adjacent chains through an oxo bond
Implementation Method 3
a metal compound generally has large thermal shrinkage during baking
Data Source
Figure 1(A)~1(F)
Figure 2(G)~3(S)
Figure 4(T)~4(U)
AI summary
The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is represented by the following general formula (M). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used. Tn-Sn-Qm (M)