A tin-oxygen double-bond photoresist uses light-triggered ligand dissociation to improve EUV pattern resolution, uniformity, and reproducibility.
A tetravalent organotin film composition improves dry etch resistance while preserving filling, planarization, and low bake shrinkage.
Ethylenediammonium creates Schottky defects in tin halide perovskites, improving bandgap, film coverage, and ambient stability.
A Sn-based photoresist with aryl unsaturated carboxylic acid improves EUV sensitivity, resolution, and line edge roughness for fine patterns.
A tin organometallic photoresist with phosphate or sulfate additives improves EUV sensitivity, storage stability, and fine-pattern edge quality.
A Lewis base adduct route suppresses hard-to-separate polyalkyl by-products, yielding high-purity organotin precursors for tin oxide film deposition.
Blending two organometallic compounds with tailored ligands improves EUV photospeed, resolution, low LER, and storage stability.
A D-A conjugated polymer with indenofluorenochalcogenadiazole balances carrier mobility, heat resistance, and solubility for stable organic thin films.
Organic tin photoresist films improve EUV sensitivity while reducing line edge roughness for fine 5-100 nm pattern formation.