Tin Photoresist Composition for EUV Sensitivity and Low Edge Roughness
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Solution Overview
Problem
Existing chemically amplified photoresists face challenges in achieving high sensitivity, resolution, and low line edge roughness for extreme ultraviolet lithography due to acid-catalyzed reactions and light absorbance issues, while inorganic photoresists face stability and development challenges.
Innovation Solution
A semiconductor photoresist composition comprising a tin-containing organometallic compound and a compound represented by Chemical Formula 1, which includes a phosphate or sulfate linked through oxygen with fluorine, enhancing sensitivity and storage stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If chemically amplified photoresists are used to achieve high sensitivity, then photospeed is improved, but line edge roughness increases and resolution deteriorates due to acid-catalyzed reactions
Solution Approach 1:
The patent changes the chemical parameters of the photoresist system by replacing traditional chemically amplified photoresists with organometallic photoresist compounds. This fundamental parameter change eliminates the acid-catalyzed reaction mechanism while maintaining photospeed through alternative photochemical pathways, thereby reducing line edge roughness and improving manufacturing precision.
Solution Approach 2:
The patent employs composite material design by combining organometallic compounds with specific matrices and additives. This composite approach allows the photoresist to achieve both high sensitivity (photospeed) and low line edge roughness by integrating materials with complementary properties that address both requirements simultaneously.
2Use of energy by moving object
If inorganic photoresist materials are used to improve EUV absorption and sensitivity, then photospeed is improved, but storage stability deteriorates due to corrosive acid environments
Solution Approach 1:
The patent changes the environmental parameters by replacing corrosive sulfuric acid with non-corrosive organic solvents. This parameter change maintains the high sensitivity and EUV absorption characteristics of inorganic photoresist materials while dramatically improving storage stability by eliminating the degrading acidic environment.
Solution Approach 2:
The patent introduces organic solvents as intermediary substances that mediate between the inorganic photoresist materials and the development process. These solvents provide the necessary chemical environment for high sensitivity performance while being non-corrosive to the photoresist materials during storage, thus resolving the stability issue.
3Manufacturing precision
If high concentration TMAH solution is used for development to achieve pattern formation, then patterning performance is improved, but process complexity increases and manufacturing difficulty rises
Solution Approach 1:
The patent changes the development process parameters by replacing high concentration TMAH solutions with dilute organic solvent-based developers. This parameter change maintains effective patterning performance while simplifying the development process, reducing equipment requirements, and lowering manufacturing complexity.
Solution Approach 2:
The patent employs disposable-like simplicity in the development process by using organic solvents that can be easily handled, disposed of, and replaced without complex recovery or neutralization procedures. This approach reduces process complexity and manufacturing difficulty while maintaining patterning performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition provides improved sensitivity and storage stability, enabling the formation of fine patterns with reduced line edge roughness and increased resolution for semiconductor manufacturing.
Implementation Method 1
alkyl ligands are dissociated by light absorption or secondary electrons produced
Implementation Method 2
alkyl ligands are dissociated by light absorption or secondary electrons produced
Implementation Method 3
The dissociated alkyl ligands are then crosslinked with adjacent chains through oxo bonds
Data Source
AI summary
A semiconductor photoresist composition and a method of forming patterns using the composition are disclosed. The semiconductor photoresist composition may include a tin (Sn)-containing organometallic compound, a compound represented by Chemical Formula 1, and a solvent.