OTP Memory Gate Electromigration for Logic State Switching
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Solution Overview
Problem
Existing OTP memory devices lack an efficient mechanism for changing the logic state after initial programming, limiting their versatility in applications requiring data modification.
Innovation Solution
The proposed OTP memory device incorporates a unique program mechanism where the gate electrode layer is modified through electromigration by applying different voltages to its ends, altering the transistor's threshold voltage and logic state.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the OTP memory cell is programmed once with fixed threshold voltage, then the security and reliability are improved, but the ability to modify data is lost
Solution Approach 1:
The patent implements a dual-mode threshold voltage mechanism where the OTP memory cell can dynamically switch between a first threshold voltage state (enabling data programming) and a second threshold voltage state (enabling data erasure). This is achieved through controllable charge trapping in the oxide layer, allowing the device to adapt its functionality based on operational requirements while maintaining security.
Solution Approach 2:
The invention changes the threshold voltage parameter of the transistor to enable different operational modes. By controlling the amount of charge trapped in the oxide layer through applied voltage sequences, the threshold voltage can be adjusted between two distinct states, thereby enabling both programming and erasing operations without compromising the one-time programmable security feature.
2Ease of manufacture
If a conventional OTP mechanism is used, then the manufacturing simplicity is maintained, but the functionality is limited to single programming
Solution Approach 1:
The patent creates a multi-functional OTP memory cell that can perform both programming and erasing operations using the same basic structure. The device utilizes the inherent electrical characteristics of the oxide layer and transistor to achieve multiple operational modes without requiring additional manufacturing steps or complex circuitry, thereby maintaining ease of manufacture while enhancing functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for a reliable and efficient change in the logic state of the OTP memory device, enhancing its applicability in security and data storage applications.
Implementation Method 1
the gate electrode layer is modified through electromigration by applying different voltages to its ends
Data Source
AI summary
A one-time-programmable (OTP) memory device includes an active region and a gate electrode layer. The active region includes a channel region having a channel layer and source/drain regions disposed on opposite sides of the channel region in a Y-direction. The gate electrode layer extends in an X-direction and wraps around the channel layer. A first thickness of the gate electrode layer from a first edge of a first end of the gate electrode layer to the channel layer in the X-direction is equal to a second thickness of the gate electrode layer from a second edge of a second end of the gate electrode layer to the channel layer in the X-direction. After the first end is connected to a first voltage and the second end is connected to a second voltage different to the first voltage, the first thickness is different to the second thickness.