OTP Memory Cell Layout with Dual Word Lines
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Solution Overview
Problem
Current one-time programmable (OTP) memory devices face challenges with weak reading current and longer stress time under program mode, limiting their performance and efficiency.
Innovation Solution
The OTP memory device design features a layout with two word lines adjacent to a single source line, reducing the overall area and optimizing the transmission of electrons, which allows for reduced programmable time and increased read current while maintaining voltage or reducing voltage requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If conventional OTP memory device architecture is used, then fabrication cost is low and storage is easy, but reading current is weak and program stress time is long
Solution Approach 1:
The patent introduces a new dimensional arrangement by placing two word lines on opposite sides of a source line in a planar configuration, rather than the conventional single word line arrangement. This spatial reorganization in the two-dimensional plane optimizes electron transmission paths and increases read current while reducing program stress time
Solution Approach 2:
The patent changes the structural parameters of the memory cell by introducing dual word lines and optimizing their spacing relative to the source line. This parameter modification enables improved electrical characteristics including enhanced read current and reduced programming time without compromising the OTP functionality
2Area of moving object
If memory cell area is reduced, then device integration is improved, but reading current may be weakened
Solution Approach 1:
The patent achieves area reduction through optimized two-dimensional layout arrangement of the dual word lines and source line, maximizing space utilization while maintaining effective electron transmission paths that preserve read current strength
Solution Approach 2:
The patent applies local quality optimization by concentrating the word line structures where they are most effective for electron transmission, with the two word lines positioned adjacent to the source line to maximize local electrical field efficiency within the reduced area
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces the area of each memory cell by approximately 3%, enhances read current, and potentially halves the programmable time, addressing the limitations of existing OTP memory devices.
Implementation Method 1
a first metal interconnection connecting the first word line and the second word line
Data Source
AI summary
A one-time programmable (OTP) memory device includes a first memory cell, which further includes a first source line extending along a first direction on a substrate, a first word line extending along the first direction on one side of the first source line, a second word line extending along the first direction on another side of the first source line, a first diffusion region extending along a second direction adjacent to two sides of the first word line and the second word line, and a first metal interconnection connecting the first word line and the second word line.