OTP Memory Programming via Mismatch Cell Correction
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Solution Overview
Problem
Conventional one-time programmable (OTP) memory programming methods are inefficient due to high current energy concentration on unbroken gate insulating layers, leading to prolonged processing times and reduced yield rates, as the breaking of the insulating layer is not consistently achieved.
Innovation Solution
A memory programming apparatus and method that includes a memory reader and writer configured to read and write data, generate a re-writing pattern, and correct mismatch cells by performing repeated re-reading and re-correcting operations until errors are eliminated, using a voltage generator to provide a fusing voltage based on the re-writing pattern to update and correct mismatch cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional OTP memory programming is performed by providing high voltage to all cells, then data can be written to the memory, but processing time is prolonged and yield rate is reduced due to energy concentration on unbroken gate insulating layers
Solution Approach 1:
The patent performs a preliminary sensing operation before the programming step to identify which cells already contain the correct data. This preliminary action allows the system to generate a mask pattern that excludes already-correct cells from the subsequent programming operation, preventing energy waste on unbroken gate insulating layers and reducing processing time while improving yield rate.
Solution Approach 2:
The patent applies programming voltage selectively to only those specific cells that require programming, rather than applying voltage uniformly to all cells. This local quality approach is achieved through mask pattern generation that identifies and targets only the mismatched cells, concentrating energy where needed and avoiding energy waste on cells with already-broken gate insulating layers.
2Manufacturing precision
If high voltage is applied to break the gate insulating layer, then data can be programmed, but energy is wasted on cells where the layer is already broken, reducing overall efficiency
Solution Approach 1:
The patent implements a feedback mechanism where the sensing operation reads the current state of memory cells and provides this information back to the programming operation. This feedback loop allows the system to adjust the programming mask pattern based on actual cell states, ensuring that voltage is applied only to cells that need it, thereby reducing energy waste while maintaining programming accuracy.
Solution Approach 2:
The sensing operation is performed as a preliminary step before programming to identify which cells require voltage application. This preliminary identification creates a mask pattern that guides the subsequent programming operation, ensuring energy is consumed only where necessary to break gate insulating layers that need breaking.
Data Source
AI summary
The memory programming apparatus includes a memory reader configured to read a read data in a plurality of cells related with an address of a programmable memory; and a memory writer configured to record a write data on the plurality of cells to compare the write data with the read data, to generate a re-writing pattern, and to correct at least one mismatch cell among the plurality of cells. Accordingly, it may be possible to reduce a programming processing time and to increase a yield rate.