OTP ROM Programming via Dual-Cell Segmentation and Oxide Rupture
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Solution Overview
Problem
The programming operation in one-time programming (OTP) ROM units often results in erroneous judgments and higher power consumption due to variations in the formed location of the permanent conductance channel, which affects the accuracy and efficiency of memory operations.
Innovation Solution
The proposed method involves a memory unit structure with a well region, select gate, first and second gates, oxide nitride spacer, and diffusion regions, where a breakdown voltage is applied to the second diffusion region through a channel formed under the select gate, and programming voltages are applied sequentially or simultaneously to rupture first and second oxide layers, enhancing the success probability of programming and reducing power consumption during read operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a programming operation is performed in OTP ROM units, then the memory is programmed, but the formed location of the permanent conductance channel varies, resulting in erroneous judgments and higher power consumption
Solution Approach 1:
The patent divides the single memory cell into two separate memory cells, each with its own conductance channel formation region. By segmenting the programming function across two cells, the system can independently control and verify the formation of conductance channels, eliminating erroneous judgments caused by location variations in a single cell.
Solution Approach 2:
The patent creates different local structures for the two memory cells, with each cell having its own specific conductance channel formation region. This local differentiation allows each cell to be programmed and read independently, ensuring that variations in conductance channel location within one cell do not affect the other, thereby improving programming accuracy and reducing erroneous judgments.
2Reliability
If a programming operation is performed in OTP ROM units, then the memory is programmed, but power consumption increases during read operations
Solution Approach 1:
By dividing the memory into two separate cells, the system can perform read operations on only one cell at a time based on the stored data state. This segmentation reduces the total power consumption during read operations compared to a single-cell design that would require higher voltage to overcome location variations.
Solution Approach 2:
The patent changes the operational parameters by using two memory cells with different conductance channel formation characteristics. This allows the system to optimize read voltage levels and reduce power consumption, as each cell can be read with lower voltage without suffering from the location variation problems that plague single-cell designs.
3Productivity
If the conductance channel formation location varies, then programming is completed, but erroneous judgments occur during read operations
Solution Approach 1:
The patent segments the memory into two independent cells, each capable of independent programming and reading. This allows the system to maintain fast programming speeds while improving read accuracy, as each cell's conductance channel location variations can be independently managed and verified without affecting the other cell's operation.
Solution Approach 2:
The dual-cell structure enables a feedback mechanism where the state of one cell can verify the programming success of the other. By comparing results from both cells, the system can detect and correct erroneous judgments, thereby maintaining high programming productivity while improving read operation accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases the success probability of programming operations, decreases erroneous judgments during read operations, and determines the state of the memory unit with reduced power consumption by using two memory cells to store a state, thereby improving the overall performance of the OTP ROM units.
Implementation Method 1
a programming operation of the OTP ROM unit is based on the breakdown of the oxide layer of the gate to form a permanent conductance channel
Data Source
AI summary
An operating method for a memory unit is provided, wherein the memory unit includes a well region, a select gate, a first gate, a second gate, an oxide nitride spacer, a first diffusion region, and a second diffusion region. The operating method for the memory unit comprises the following steps. During a programming operation, a breakdown voltage is coupled to the second diffusion region through a first channel region formed under the select gate. A programming voltage is sequentially or simultaneously applied to the first gate and the second gate to rupture a first oxide layer and a second oxide layer, wherein the first oxide layer is disposed between the first gate and the well region, and the second oxide layer is disposed between the second gate and the well region.