Output Buffer Wiring Layout for Lower I/O Capacitance
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Solution Overview
Problem
Existing semiconductor devices face challenges in reducing capacitance at data I/O terminals to enhance data transfer rates and lower current consumption.
Innovation Solution
The implementation of a semiconductor device design that includes specific transistor configurations and wiring layouts for output buffers, minimizing capacitance by arranging transistors and conductive patterns to reduce overlapping areas, thereby reducing capacitive coupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional transistor configurations and wiring layouts are used in output buffers, then device functionality is maintained, but capacitance at data I/O terminals increases, reducing data transfer rates and increasing current consumption
Solution Approach 1:
The patent applies dimensionality change by transitioning from a planar two-dimensional layout to a three-dimensional stacked configuration. Transistors are arranged in multiple vertical layers with source and drain regions positioned at different heights, allowing conductive patterns to connect regions without overlapping in the planar view. This vertical stacking reduces capacitive coupling between adjacent conductors while maintaining electrical connectivity, thereby reducing total capacitance at the data I/O terminal and enabling higher data transfer rates.
Solution Approach 2:
The patent segments the output buffer circuit into multiple independent transistor layers stacked vertically. Each layer contains transistors with source and drain regions that are electrically connected through conductive patterns in intermediate wiring layers. This segmentation allows the circuit to maintain functionality while reducing planar overlap area, thereby reducing parasitic capacitance and improving data transfer performance.
2Loss of energy
If conventional transistor configurations and wiring layouts are used in output buffers, then device functionality is maintained, but current consumption increases due to higher capacitance
Solution Approach 1:
The patent applies dimensionality change by transitioning from a planar two-dimensional layout to a three-dimensional stacked configuration. Transistors are arranged in multiple vertical layers with source and drain regions positioned at different heights, allowing conductive patterns to connect regions without overlapping in the planar view. This vertical stacking reduces capacitive coupling between adjacent conductors while maintaining electrical connectivity, thereby reducing total capacitance at the data I/O terminal and enabling higher data transfer rates.
Solution Approach 2:
The patent segments the output buffer circuit into multiple independent transistor layers stacked vertically. Each layer contains transistors with source and drain regions that are electrically connected through conductive patterns in intermediate wiring layers. This segmentation allows the circuit to maintain functionality while reducing planar overlap area, thereby reducing parasitic capacitance and improving data transfer performance.
Data Source
AI summary
Some embodiments provide an apparatus including a semiconductor substrate having source regions and regions alternately arranged in a first direction; gate electrodes between the source regions and the drain regions; a first wiring layer including first conductive patterns covering the source regions and second conductive patterns covering the drain regions; first via conductors between the first conductive patterns and the source regions; second via conductors between the second conductive patterns and the drain regions; a second wiring layer over the first wiring layer, including third conductive patterns covering the first conductive patterns and fourth conductive patterns covering the second conductive patterns; third via conductors between the third conductive patterns and the first conductive patterns; and fourth via conductors between the fourth conductive patterns and the second conductive patterns. The fourth via conductors are shifted from the third via conductors in a second direction perpendicular to the first direction.