Output Driving Device with Composite Transistor Slew Rate Control
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Solution Overview
Problem
Conventional output drivers in semiconductor memory devices face challenges in securing a valid data period due to differences in slew rates between PMOS and NMOS transistors, leading to increased noise vulnerability and degraded input characteristics, especially during high-speed operations.
Innovation Solution
The output driving device incorporates a pull-up driver and a pull-down driver, along with a first NMOS transistor for pull-up driving and a first PMOS transistor for pull-down driving, utilizing level shift circuits to generate pre-control signals that enhance the slew rate by adjusting voltage levels, thereby complementing the slew rate characteristics of PMOS transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the size of the PMOS transistor is increased to secure the same valid data window, then the slew rate is improved, but the output signal becomes more vulnerable to noise and input characteristics are downgraded
Solution Approach 1:
The patent combines a PMOS transistor and an NMOS transistor in parallel configuration to form a composite pull-up driver. The PMOS transistor provides the main pull-up current while the NMOS transistor supplements it, achieving higher slew rate without increasing the size of the PMOS transistor alone, thus avoiding noise vulnerability and input characteristic degradation.
Solution Approach 2:
The patent creates a composite transistor structure by merging PMOS and NMOS transistors with different electrical characteristics. This composite driver leverages the complementary strengths of both transistor types to achieve superior slew rate performance while maintaining robust noise immunity and input characteristics.
2Speed
If the size of the PMOS transistor is increased to secure the same valid data window, then the slew rate is improved, but the capacitance of the output node is increased
Solution Approach 1:
The patent combines a PMOS transistor and an NMOS transistor in parallel configuration to form a composite pull-up driver. The PMOS transistor provides the main pull-up current while the NMOS transistor supplements it, achieving higher slew rate without increasing the size of the PMOS transistor alone, thus avoiding noise vulnerability and input characteristic degradation.
3Device complexity
If a conventional push-pull driver is used, then the circuit structure is simple, but the valid data period margin is insufficient due to asymmetric slew rates
Solution Approach 1:
The patent combines a PMOS transistor and an NMOS transistor in parallel configuration to form a composite pull-up driver. The PMOS transistor provides the main pull-up current while the NMOS transistor supplements it, achieving higher slew rate without increasing the size of the PMOS transistor alone, thus avoiding noise vulnerability and input characteristic degradation.
Data Source
AI summary
An output driving device includes a pull-up driver for pull-up driving an output node in response to a pull-up control signal; a pull-down driver for pull-down driving the output node in response to a pull-down control signal; and a first n-type metal oxide semiconductor (NMOS) transistor for pull-up driving the output node in response to a pre-pull-up control signal.


