Oxide Semiconductor Circuit Layout for Oxygen Diffusion Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in achieving small variations in transistor characteristics, favorable reliability, and high on-state current while being miniaturized or highly integrated, with issues related to oxygen diffusion and impurity control.
Innovation Solution
The semiconductor device incorporates multiple circuit regions with varying transistor densities, using oxide semiconductors and insulators that inhibit oxygen diffusion, and employing a method for manufacturing that includes oxygen adding treatment and heat treatment to optimize oxygen supply and reduce impurities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If transistor density is increased to achieve high integration, then productivity and device functionality are improved, but variations in transistor characteristics increase and reliability deteriorates
Solution Approach 1:
The patent applies local quality by providing different insulator structures to different circuit regions based on their specific needs. High-density circuit regions receive insulators with stronger oxygen diffusion inhibition properties, while low-density regions receive insulators with oxygen adding properties. This localized differentiation allows each region to be optimized independently, maintaining transistor characteristic uniformity across the entire device despite varying density requirements.
Solution Approach 2:
The patent segments the semiconductor device into multiple circuit regions with different insulator configurations. By dividing the device into regions that can be independently optimized, the patent resolves the contradiction between high integration and characteristic uniformity. Each segment can be tailored to its specific density and performance requirements without compromising other regions.
2Use of energy by moving object
If oxide semiconductor is used to reduce leakage current, then power consumption is reduced, but oxygen diffusion and impurity control become critical challenges
Solution Approach 1:
The patent uses insulator layers as intermediary substances between the oxide semiconductor and the environment. These insulators act as barriers that prevent harmful oxygen diffusion and impurity contamination while allowing the oxide semiconductor to maintain its low leakage current properties. The insulator mediates the interaction between the oxide semiconductor and external factors, protecting it from degradation.
Solution Approach 2:
The patent applies preliminary anti-action by pre-configuring insulator layers with specific oxygen diffusion inhibition properties before the oxide semiconductor is exposed to environments that could cause oxygen loss or impurity contamination. This preventive measure counteracts potential harmful effects before they can degrade the oxide semiconductor's performance.
3Reliability
If multiple insulator layers are added to control oxygen diffusion, then transistor characteristic uniformity is improved, but device complexity increases
Solution Approach 1:
The patent reduces complexity by applying local quality - not all regions receive the same complex multi-layer insulator structure. Instead, only specific high-density circuit regions receive enhanced oxygen diffusion inhibition insulators, while other regions use simpler insulator configurations. This selective approach maintains characteristic uniformity where needed without unnecessarily complicating the entire device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of semiconductor devices with small variations in transistor characteristics, improved reliability, high on-state current, and low power consumption, facilitating miniaturization and high integration.
Implementation Method 1
the first insulator, the second insulator, and the third insulator inhibit oxygen diffusion
Implementation Method 2
employing a method for manufacturing that includes oxygen adding treatment and heat treatment to optimize oxygen supply
Data Source
AI summary
To provide a semiconductor device with less variations in characteristics. The semiconductor device includes a first circuit region and a second circuit region over a substrate, where the first circuit region includes a plurality of first transistors and a first insulator over the plurality of first transistors; the second circuit region includes a plurality of second transistors and a second insulator over the plurality of second transistors; the second insulator includes an opening portion; the first transistors and the second transistors each include an oxide semiconductor; a third insulator is positioned over and in contact with the first insulator and the second insulator; the first insulator, the second insulator, and the third insulator inhibit oxygen diffusion; and the density of the plurality of first transistors arranged in the first circuit region is higher than the density of the plurality of second transistors arranged in the second circuit region.