Oxide Semiconductor Display Backplane for Integrated High-Speed Circuits
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Solution Overview
Problem
Existing display devices face challenges in achieving high-speed operation and integrating pixel and driver circuits over the same substrate, while also forming different transistors separately on the same substrate.
Innovation Solution
A manufacturing method for a display device that involves forming first and second transistors with different oxide semiconductor layers over the same substrate, using a process that includes forming insulating layers, metal oxide films, and metal films, and etching these layers to create island-shaped semiconductor and metal layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a single crystal substrate is used for the driver IC to achieve high performance, then the operation speed and resolution are improved, but the manufacturing cost and device complexity increase
Solution Approach 1:
The patent merges the driver circuit and pixel circuits onto a single substrate, eliminating the need for separate driver IC chips. This integration maintains high-speed operation capabilities while reducing device complexity and manufacturing costs associated with multi-component assemblies.
Solution Approach 2:
The substrate is designed to serve multiple functions simultaneously - acting as both the base for driver circuits and the platform for pixel circuits. This universal substrate approach replaces the traditional separate single-crystal driver IC, achieving high performance without increased complexity.
2Speed
If different transistor types are formed on the same substrate to achieve high-speed operation, then the performance is improved, but the manufacturing process complexity increases
Solution Approach 1:
The patent applies local quality by forming different oxide semiconductor layers with specific compositions at different locations on the substrate. The first oxide semiconductor layer contains indium and gallium for driver circuit transistors requiring high-speed operation, while the second layer has different composition for pixel circuit transistors, allowing optimized performance for each function within a unified manufacturing process.
3Speed
If oxide semiconductor layers with different compositions are formed separately to achieve high-speed operation, then the field-effect mobility is improved, but the number of manufacturing steps increases
Solution Approach 1:
The patent employs preliminary action by forming the first oxide semiconductor layer containing indium and gallium before forming the second oxide semiconductor layer. This sequential formation approach allows each layer to be optimized for specific transistor types while maintaining a streamlined manufacturing process that doesn't require excessive additional steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the creation of a display device with high-speed operation capabilities, allowing for the integral formation of pixels and driver circuits over the same substrate, and enabling the separate formation of different transistors, thereby improving display performance and resolution.
Implementation Method 1
A metal oxide can be formed by a sputtering method or the like
Data Source
AI summary
A circuit capable of high-speed operation and a pixel are integrally formed over the same substrate. A first metal oxide film, a first metal film, and an island-shaped first resist mask are formed over a first insulating layer. An island-shaped first metal layer and an island-shaped first oxide semiconductor layer are formed and a part of a top surface of the first insulating layer is exposed; then, the first resist mask is removed. A second metal oxide film, a second metal film, and an island-shaped second resist mask are formed over the first metal layer and the first insulating layer. An island-shaped second metal layer and an island-shaped second oxide semiconductor layer are formed; then, the second resist mask is removed. The first metal layer and the second metal layer are removed.