Metal Oxide Semiconductor Layer Doping for Stable Electrical Characteristics
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving favorable and stable electrical characteristics, particularly in display devices, due to issues with oxygen vacancies and carrier density in metal oxide semiconductor layers.
Innovation Solution
A semiconductor device structure is developed with specific regions in the metal oxide semiconductor layer, including a channel formation region, source/drain regions, and a lightly doped drain region, where elements like boron, phosphorus, or magnesium are bonded to oxygen to create oxygen vacancies and control hydrogen concentration, reducing resistance and enhancing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal oxide semiconductor layers are used in display devices, then high field-effect mobility and high-performance display devices can be achieved, but oxygen vacancies and unstable electrical characteristics occur
Solution Approach 1:
The patent applies local quality by creating distinct regions within the semiconductor layer with different dopant concentrations. The channel formation region has lower dopant concentration to maintain high mobility, while the source and drain regions have higher dopant concentration to reduce resistance. This spatial variation in composition allows simultaneous optimization of conductivity and electrical stability without uniform compromise throughout the entire layer.
Solution Approach 2:
The patent utilizes parameter changes by varying the dopant concentration across different regions of the semiconductor layer. By controlling the concentration of dopants (such as indium, gallium, aluminum, boron, phosphorus, or magnesium) in specific regions, the electrical characteristics are optimized. The channel region maintains lower dopant concentration for high mobility, while source/drain regions use higher concentrations to reduce resistance and stabilize electrical properties.
2Reliability
If dopants are added to source and drain regions to reduce resistance, then conductivity improves, but oxygen vacancies increase and electrical characteristics become unstable
Solution Approach 1:
The patent applies local quality by creating distinct regions within the semiconductor layer with different dopant concentrations. The channel formation region has lower dopant concentration to maintain high mobility, while the source and drain regions have higher dopant concentration to reduce resistance. This spatial variation in composition allows simultaneous optimization of conductivity and electrical stability without uniform compromise throughout the entire layer.
Solution Approach 2:
The patent employs composite materials by combining metal oxide semiconductor layers with specific dopants (indium, gallium, aluminum, boron, phosphorus, or magnesium) in controlled concentrations. The composite structure integrates different elemental compositions within the same semiconductor layer, allowing the channel region to maintain high mobility while source/drain regions achieve low resistance through optimized dopant combinations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure achieves semiconductor devices with improved electrical characteristics, reduced oxygen vacancies, and low carrier density, leading to high reliability and performance in display devices.
Implementation Method 1
A metal oxide that can be used for a semiconductor layer can be deposited by a sputtering method or the like
Implementation Method 2
The second region and the third region contain a first element. The first element is one or more elements selected from boron, phosphorus, aluminum, and magnesium. The first element exists in a state of being bonded to oxygen.
Data Source
AI summary
A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided.The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The first insulating layer is provided over the semiconductor layer. The first conductive layer is provided over the first insulating layer. The semiconductor layer includes a first region that overlaps with the first conductive layer and the first insulating layer, a second region that does not overlap with the first conductive layer and overlaps with the first insulating layer, and a third region that overlaps with neither the first conductive layer nor the first insulating layer. The semiconductor layer contains a metal oxide. The second region and the third region contain a first element. The first element is one or more elements selected from boron, phosphorus, aluminum, and magnesium. The first element exists in a state of being bonded to oxygen.