Oxide Layer Uniformity via Reaction-Inhibiting Functional Groups
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Solution Overview
Problem
The challenge is to achieve high thickness uniformity of oxide layers in semiconductor devices, particularly in highly integrated semiconductor memory devices where the increased aspect ratio of elements leads to degraded film uniformity, affecting the reliability and performance of these devices.
Innovation Solution
A method involving the formation of reaction-inhibiting functional groups on a substrate, followed by the deposition and oxidation of precursors to create an oxide layer, which includes multiple cycles of forming reaction-inhibiting groups, depositing precursors, and oxidizing them, using specific reaction gases and oxidants to ensure uniformity, particularly for metals and semiconductors like titanium, zirconium, and silicon.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the degree of integration of semiconductor device is increased, then the reliability and performance are improved, but the aspect ratio of elements increases and film thickness uniformity degrades
Solution Approach 1:
The patent applies preliminary action by forming reaction-inhibiting functional groups on the substrate surface before depositing the oxide layer. This preliminary modification of the substrate surface prevents unwanted reactions during subsequent processing steps, enabling uniform film deposition even on high aspect ratio structures. The functional groups are formed in advance to create a controlled environment for precise film thickness control.
Solution Approach 2:
The patent employs parameter changes by systematically adjusting multiple process parameters including the type of reaction-inhibiting functional groups formed, the composition and flow rates of reaction gases, temperature profiles, and oxidation conditions. These parameter optimizations enable precise control over film deposition kinetics, achieving uniform thickness across elements with varying aspect ratios while maintaining high integration density.
2Ease of manufacture
If conventional deposition methods are used on high aspect ratio elements, then the manufacturing process is simple, but the film thickness uniformity degrades
Solution Approach 1:
The patent introduces reaction-inhibiting functional groups as an intermediary layer between the substrate and the oxide precursor. This intermediary prevents direct unwanted reactions between the substrate and precursor materials, creating a controlled interface that enables uniform film deposition. The functional groups act as a mediator that facilitates precise thickness control without complicating the overall manufacturing process.
Solution Approach 2:
The patent implements periodic action through multiple cyclic deposition steps, where each cycle includes forming reaction-inhibiting functional groups, depositing precursor material, and oxidizing to form the oxide layer. This periodic repetition of controlled cycles allows progressive buildup of uniform oxide film thickness, achieving precision that cannot be obtained through single-step conventional deposition methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method results in semiconductor devices with oxide layers exhibiting high thickness uniformity and excellent electrical characteristics, enhancing the reliability and performance of semiconductor memory devices by maintaining uniformity even on features with high aspect ratios.
Implementation Method 1
forming a layer of reaction-inhibiting functional groups on a surface of a substrate
Implementation Method 2
forming a layer of precursors of a particular material on the layer of the reaction-inhibiting functional groups
Implementation Method 3
oxidizing the precursors of the particular material to obtain a layer of an oxide of the particular material
Data Source
AI summary
A method of forming an oxide layer. The method includes: forming a layer of reaction-inhibiting functional groups on a surface of a substrate; forming a layer of precursors of a metal or a semiconductor on the layer of the reaction-inhibiting functional groups; and oxidizing the precursors of the metal or the semiconductor in order to obtain a layer of a metal oxide or a semiconductor oxide. According to the method, an oxide layer having a high thickness uniformity may be formed and a semiconductor device having excellent electrical characteristics may be manufactured.