Oxide Semiconductor Logic Circuit for Low-Power Stable Operation
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Solution Overview
Problem
Logic circuits composed of n-channel transistors face issues with threshold voltage drop and increased power consumption due to shoot-through currents, and Si transistors experience electrical characteristic changes at high temperatures, leading to unreliable circuit operation.
Innovation Solution
A semiconductor device incorporating a configuration of OS transistors with specific connections and back gate potentials to reduce shoot-through currents and maintain reliable operation, utilizing metal oxide transistors with indium, zinc, or gallium in the channel formation region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a logic circuit is composed of only n-channel transistors, then the circuit can be simplified in structure, but the threshold voltage drops and power consumption increases due to shoot-through currents
Solution Approach 1:
The patent changes the material parameter of the transistor channel from silicon to oxide semiconductor, which fundamentally alters the electrical characteristics. This material parameter change enables the transistor to maintain stable threshold voltage and dramatically reduce off-state leakage current, thereby reducing power consumption in single-polarity logic circuits without increasing structural complexity
2Device complexity
If a logic circuit is composed of only n-channel transistors, then the circuit can be simplified in structure, but shoot-through currents increase leading to higher power consumption
Solution Approach 1:
The patent changes the material parameter of the transistor channel from silicon to oxide semiconductor, which fundamentally alters the electrical characteristics. This material parameter change enables the transistor to maintain stable threshold voltage and dramatically reduce off-state leakage current, thereby reducing power consumption in single-polarity logic circuits without increasing structural complexity
3Ease of manufacture
If silicon transistors are used, then the transistors can be easily manufactured, but electrical characteristics change at high temperatures leading to unreliable operation
Solution Approach 1:
The patent changes the material parameter of the transistor channel from silicon to oxide semiconductor, which fundamentally alters the electrical characteristics. This material parameter change enables the transistor to maintain stable threshold voltage and dramatically reduce off-state leakage current, thereby reducing power consumption in single-polarity logic circuits without increasing structural complexity
Data Source
AI summary
A semiconductor device capable of stable operation with low power consumption is provided. A logic circuit having a circuit configuration using a transistor including an oxide semiconductor in a channel formation region is included. The logic circuit is a two-input/two-output two-wire logic circuit. Transistors included in the logic circuit each include a gate and a back gate. An input terminal is electrically connected to one of a gate and a back gate of a transistor electrically connected to a wiring for supplying a high power supply potential. An output terminal is connected to the other of the gate and the back gate of the transistor electrically connected to the wiring for supplying a high power supply potential. An output terminal is electrically connected to one of a source and a drain of a transistor electrically connected to a wiring for supplying a low power supply potential. A gate or a back gate of the transistor electrically connected to the wiring for supplying a low power supply potential is electrically connected to an input terminal.