Oxide Semiconductor Reconfigurable Circuit Memory for Power-Off Retention
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Solution Overview
Problem
Semiconductor devices face challenges in maintaining the connection relation between logic circuit units or circuit configuration for a long time after power supply voltage is stopped, and achieving high-speed operation with low power consumption.
Innovation Solution
A semiconductor device incorporating an oxide semiconductor in the storage circuit, which includes a transistor and a capacitor, allowing data to be stored and maintained even after power is stopped, and enabling high-speed operation with reduced power consumption by using a lower drive voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If SRAM or DRAM is used as the storage circuit, then the connection relation between logic circuit units or the circuit configuration can be changed at high speed, but the stored data is lost when supply of power supply voltage is stopped
Solution Approach 1:
The patent changes the physical state parameter of the storage circuit from volatile (SRAM/DRAM) to non-volatile by introducing oxide semiconductor memory, which maintains data retention after power stop while preserving high-speed operation capabilities through optimized circuit design
2Reliability
If flash memory is used as the storage circuit, then data can be maintained even after supply of power supply voltage is stopped, but it is difficult to achieve high-speed operation and reduce power consumption because the drive voltage of flash memory is high
Solution Approach 1:
The patent changes the voltage parameter by using oxide semiconductor memory which operates at lower voltages compared to flash memory, thereby achieving both high-speed operation and reduced power consumption while maintaining non-volatile data storage capabilities
Solution Approach 2:
The patent replaces the high-power flash memory with a more efficient oxide semiconductor-based storage circuit that consumes less power and operates faster, effectively using a superior technology to replace the conventional solution
3Reliability
If flash memory is used as the storage circuit, then data can be maintained even after supply of power supply voltage is stopped, but power consumption is high because the drive voltage of flash memory is high
Solution Approach 1:
The patent changes the energy consumption parameter by introducing oxide semiconductor memory which operates at lower drive voltages, thereby significantly reducing power consumption while maintaining non-volatile data storage functionality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device effectively maintains data on the connection relation and circuit configuration for a long time and allows for high-speed operation with low power consumption, overcoming the limitations of volatile SRAM/DRAM and high-power flash memory.
Implementation Method 1
A semiconductor device includes a storage circuit that stores data on a circuit configuration or the like, and includes a semiconductor element including an oxide semiconductor in the storage circuit
Data Source
AI summary
An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.