Oxide Semiconductor Common Connection Structure for Display Devices
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Solution Overview
Problem
The existing manufacturing processes for liquid crystal display devices using oxide semiconductors face challenges such as defects due to thin film separation and high connection resistance in common connection portions, leading to decreased luminance and operational issues.
Innovation Solution
A display device structure is proposed with a common connection portion using stacked oxide semiconductor and conductive layers, where the oxide semiconductor layers have different oxygen concentrations and are electrically connected through conductive particles, reducing resistance and enhancing structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a thin film transistor is manufactured using oxide semiconductor, then field effect mobility is improved and manufacturing temperature is reduced, but thin film separation defects occur and connection resistance increases
Solution Approach 1:
The patent uses a composite structure consisting of an oxide semiconductor layer stacked with a conductive layer (such as aluminum or copper). This composite material approach allows the oxide semiconductor to provide high field effect mobility while the conductive layer provides structural support and reduces connection resistance, preventing thin film separation defects.
Solution Approach 2:
The patent combines the oxide semiconductor layer with a conductive layer into a single integrated structure for the common connection portion. This merging of functional layers (semiconductor function + conductive function) resolves the contradiction by allowing both high mobility and structural integrity to coexist in the same component.
2Ease of manufacture
If a thin film transistor is manufactured using oxide semiconductor, then manufacturing process is simplified, but connection resistance in common connection portion increases
Solution Approach 1:
The patent employs a composite structure where the oxide semiconductor layer is stacked with a highly conductive material layer. This composite approach maintains the ease of oxide semiconductor manufacturing while the conductive layer specifically addresses the connection resistance issue in the common connection portion.
Solution Approach 2:
The patent applies the conductive layer specifically in the common connection portion where high conductivity is needed, rather than throughout the entire device. This local quality approach reduces connection resistance at critical points while maintaining the overall simplicity of oxide semiconductor manufacturing.
3Device complexity
If thin film layers are used in display device, then device complexity is reduced, but thin film separation defects occur
Solution Approach 1:
The patent uses a composite material structure where an oxide semiconductor layer is stacked with a conductive layer. This composite approach maintains relative simplicity while the strong interlayer bonding in the composite structure prevents separation defects that would occur with simpler single-material thin films.
Solution Approach 2:
The patent introduces an intermediate layer between the oxide semiconductor layer and the conductive layer. This intermediate layer acts as a bonding interface that prevents direct contact between incompatible materials, thereby preventing separation defects while maintaining structural simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution prevents defects from thin film separation and reduces connection resistance, resulting in improved luminance and reliability of the display device.
Implementation Method 1
The oxide semiconductor film can be formed by a sputtering method and the like at a temperature of 300° C. or lower
Implementation Method 2
a common electrode that is electrically connected to an electrode opposite to the pixel electrode
Data Source
AI summary
To provide a structure suitable for a common connection portion provided in a display panel. A common connection portion provided in an outer region of a pixel portion has a stacked structure of an insulating layer formed using the same layer as a gate insulating layer, an oxide semiconductor layer formed using the same layer as a second oxide semiconductor layer, and a conductive layer (also referred to as a common potential line) formed using the same layer as the conductive layer, in which the conductive layer (also referred to as the common potential line) is connected to a common electrode through an opening in an interlayer insulating layer provided over the first oxide semiconductor layer and an electrode opposite to a pixel electrode is electrically connected to the common electrode through conductive particles.