Oxide Semiconductor Configuration Storage for Reconfigurable Logic
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Solution Overview
Problem
Existing semiconductor devices struggle to maintain the connection relation between logic circuit units or the circuit configuration of each logic circuit unit for a long time after power supply voltage is stopped, and they also face challenges in achieving high-speed operation and low power consumption.
Innovation Solution
A semiconductor device is developed that includes a storage circuit using an oxide semiconductor, which maintains the circuit configuration of logic circuit units. The device includes a logic circuit unit, a storage circuit, and a connector unit, allowing for high-speed operation and low power consumption by using transistors and capacitors in the storage circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If SRAM or DRAM is used as the storage circuit, then the connection relation between logic circuit units can be changed at high speed, but stored data is lost when supply of power supply voltage is stopped
Solution Approach 1:
The patent changes the physical state parameter of the storage medium from volatile (SRAM/DRAM) to non-volatile (oxide semiconductor), enabling data retention without power while maintaining acceptable operation speed for configuration storage
Solution Approach 2:
The patent introduces an intermediary storage circuit using oxide semiconductor that bridges the gap between volatile memory (for fast operation) and non-volatile memory (for data retention), storing configuration data that persists after power stop
2Reliability
If flash memory is used as the storage circuit, then data can be maintained after supply of power supply voltage is stopped, but it is difficult to achieve high-speed operation and reduce power consumption
Solution Approach 1:
The patent changes the drive voltage parameter from high (flash memory) to low (oxide semiconductor), achieving both data retention and reduced power consumption by utilizing the unique electrical characteristics of oxide semiconductor materials
Solution Approach 2:
The patent uses oxide semiconductor as a lower-cost, lower-power alternative to flash memory for configuration storage, accepting that the storage is non-volatile but eliminating the high power consumption requirement
3Reliability
If flash memory is used as the storage circuit, then data can be maintained after supply of power supply voltage is stopped, but it is difficult to achieve high-speed operation
Solution Approach 1:
The patent changes the operational parameter of the storage circuit by using oxide semiconductor with lower drive voltage requirements, enabling faster switching and configuration changes compared to flash memory while maintaining non-volatile data retention
Data Source
AI summary
An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.