Oxide Semiconductor Gate Electrode Hydrogen Barrier Layer
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Solution Overview
Problem
The formation of a gate insulating film in display apparatuses can lead to electrical shorts between the oxide semiconductor and the gate electrode, causing deterioration in the characteristics of thin-film transistors.
Innovation Solution
A display apparatus design featuring an oxide semiconductor pattern with a gate electrode having a stacked structure of a hydrogen barrier layer and a gate conductive layer, where the gate electrode is shorter in length than the gate insulating film, and the hydrogen barrier layer is positioned further inward than the gate insulating film, preventing electrical shorts and maintaining transistor characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the gate insulating film is formed by etching process using the gate electrode as a mask, then the gate insulating film can be properly formed, but oxide semiconductor may be deposited on the side surface of the gate insulating film causing electrical short
Solution Approach 1:
A hydrogen barrier layer is introduced as an intermediary component between the gate electrode and the oxide semiconductor pattern. This barrier layer prevents hydrogen from the gate electrode from permeating into the oxide semiconductor, thereby preventing rehydrogenation and maintaining transistor characteristics without interfering with the gate insulating film formation process.
Solution Approach 2:
The gate electrode is constructed as a composite structure with multiple layers including a hydrogen barrier layer and a gate conductive layer. This composite structure combines the functions of hydrogen blocking and electrical conduction, solving both the film formation precision and electrical short prevention requirements simultaneously.
2Ease of operation
If the oxide semiconductor pattern is fully exposed by the gate insulating film, then proper transistor operation is achieved, but hydrogen permeation from the gate electrode can occur causing characteristic deterioration
Solution Approach 1:
The hydrogen barrier layer serves as a protective intermediary that allows the oxide semiconductor pattern to remain exposed for proper transistor operation while simultaneously preventing hydrogen permeation from the gate electrode, thus maintaining transistor characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively prevents electrical shorts and maintains the reliability of the thin-film transistors, enhancing the operational stability and performance of the display apparatus by shielding the semiconductor from hydrogen permeation and preventing rehydrogenation.
Implementation Method 1
The gate electrode may have a stacked structure of a first hydrogen barrier layer and a gate conductive layer
Data Source
AI summary
A display apparatus includes an oxide semiconductor pattern disposed on a device substrate and including a channel region disposed between a source region and a drain region, a gate electrode overlapping the channel region of the oxide semiconductor pattern and having a structure in which a first hydrogen barrier layer and a gate conductive layer are stacked, and a gate insulating film disposed between the oxide semiconductor pattern and the gate electrode to expose the source region and the drain region of the oxide semiconductor pattern. The gate electrode exposes a portion of the gate insulating film that is adjacent to the source region and a portion of the gate insulating film that is adjacent to the drain region.