Solid-State Devices TRIZ Cases

Integrating a graphene material layer into an organic light-emitting diode structure improves thermal conduction efficiency and reduces heat damage.

A polycyclic compound in the emission layer promotes delayed fluorescence to boost light output.

Stacked gate electrodes with hydrogen barrier layers prevent electrical shorts and rehydrogenation in oxide semiconductor patterns.

Distinct cell structures enable accurate detection of stored data without user programmability, ensuring data integrity and reducing power consumption.

A light emitting device uses an indium-rich nitride layer to block dislocations before they reach the active region.

A dual-layer encapsulating structure with a moisture-absorbing upper layer and metal substrate dissipates heat from organic light-emitting structures.

An embedded sub-electrode microlens array redirects trapped surface plasmon and waveguide modes toward the substrate, achieving 40% outcoupling efficiency.

Stacked resistive switching materials control voltage amplitudes to suppress leakage current in non-volatile memory devices.

A display device uses conductive connectors through substrate holes to relocate the driving circuit board.

Silicon carbide lateral bipolar junction transistor detects ultraviolet light, eliminating backside thinning to maintain mechanical reliability.

Asymmetric opening alignment prevents emission layer disconnection, stabilizing output current and reducing luminance deviations.

A well region electrode connects to the semiconductor substrate through an interlayer insulating film contact hole.

A serial array memory transistor architecture uses a discrete pass transistor to modulate current flow at an adjacent metal bitline for efficient sensing.

Atomic layer deposition creates edge-contacting inorganic layers that block oxygen ingress while simplifying manufacturing complexity.

Same-side contacts on a thin film AlGaInP structure reduce series resistance and absorption losses while enhancing optical reflectivity.

Vertical gate structures resolve NAND density speed tradeoffs by enabling independent cell selection in 3D NOR memory stacks.

Concave or convex supports modify LED radiation patterns, eliminating bulky optical systems and reducing manufacturing complexity.

Silicon nitride phosphors resolve chromaticity limitations by merging red and yellow emitters to enhance luminous brightness.

Stacked single-crystalline bipolar junction transistor pillars form 3D cross-point memory arrays.

A fluorine-containing composition chemically modifies substrate surfaces to form photodegradable coupling agents.

Segmenting storage capacitance into a multi-layer stack using composite dielectric materials maintains high image quality while reducing power consumption.

A magnetic memory device uses a temperature-dependent saturation magnetization to generate leakage fields for write operations.

Patterning bank films defines pixel boundaries in micro-LED arrays, reducing visible gaps and suppressing crack propagation during transfer.

A microfluidic die applies a freeze-dried reaction agent coating to the internal volume, ensuring stability and extended shelf life at room temperature.

A second electrode with varying compensation material composition prevents shorts between electrodes.

Alternating light-absorbing portions on a flexible printed circuit board prevent bright bands near the light guide plate while maintaining luminance.

A light scattering layer improves luminance and viewing angle while preventing light-leaking in organic light-emitting displays.

A cover layer shields the back gate electrode from etching damage while a passivation opening provides access, resolving reliability and operation trade-offs.

Planarize a first film to form a flat waveguide member, then polish a second film to expose the waveguide while removing portions above the peripheral region.

Instantaneously heating source gases to generate active molecular species, enabling high-rate film formation without substrate deformation.

An optical lens system aligns with a white LED chip to mix bluish and yellowish light, resolving tone unevenness across different emission directions.

Buffered oxide etch removes silicon nitride bird's beaks from 3D memory hole interfaces, preventing cavity formation that causes parasitic charge trapping.

A light-emitting element uses a host material to transfer excitation energy to a phosphorescent guest material for efficient emission.

A variable resistance memory switching element uses a composite barrier electrode structure to minimize heat transfer between layers.

A multi-channel active pattern uses a lateral liner to form diffusion layers that reduce parasitic series resistance in semiconductor devices.

Alternating semiconductor monolayers lower effective mass and improve mobility while shallow trench isolation minimizes crosstalk between adjacent pixels.

Extending source/drain regions vertically into the substrate overcomes thin-film limits, enabling higher strain volumes and device speed.

Segmenting the oxide layer into trenches creates a hybrid refractive index that reduces reflection loss from conventional abrupt interfaces.

Segmenting the barrier layer into distinct doping regions suppresses thermal generation noise while maintaining high sensitivity.

A metal enclosing wall connects substrates to surround the display medium, forming a lateral barrier structure.

Hemispherical protrusions on the encapsulant reduce total internal reflection, improving color temperature uniformity across multiple chips.

Vertical stack control gates with greater thickness than wordlines influence channel material to reduce electrical resistance in NAND arrays.

A substrate with recessed slots vertically assembles semiconductor dies to enable robust electrical connectivity.

Vertical field-effect transistors with self-aligned contacts align memory array and peripheral circuitry surfaces, resolving non-planar production complexity.

A variable resistance memory device uses a crystallized SixGe1-x electrode to reduce conductivity band offset with an amorphous silicon layer.

Electrode micro-bumps on a flip-chip LED increase bonding area and reduce thermal resistance, improving heat dissipation for high-power applications.

A display substrate manufacturing method corrects second laser irradiation positions using test area reference data to ensure precise transmissive area formation.

A printable diode ink suspension enables direct printing of functional LEDs using solvent-based formulations.

Sequential processing deposits donor and acceptor layers using quasi-orthogonal solvents to improve film homogeneity.

A rectangular excimer laser beam melts amorphous silicon to form large polysilicon grains.

A hybrid display architecture separates digital and analog drive circuits using an indium-gallium-zinc-oxide layer to manage signal processing.

Selective barrier formation suppresses leakage between word lines, improving data reading accuracy and reducing power consumption.

Two-step annealing creates denuded zones to prevent crystal defects from oxygen precipitation during high-temperature doping.

A compact RRAM device integrates an embedded silicon diode with a variable resistance layer to enable contact-less unit cell configurations.

Alicyclic epoxy resin and blocked isocyanate enable low-temperature curing of silver electrodes, avoiding thermal degradation of Si:H solar cells.

A light pipe with a higher refractive index confines incident light to the photodiode in global shutter CMOS image sensors.

A display panel integrates an IGZO switch assembly with a light-sensing unit to dynamically regulate screen brightness and contrast levels.

A photo absorption layer on metal elements limits crosstalk between adjacent photodetector elements.

Wafer-level multi-module interposers eliminate substrates to reduce package volume while maintaining structural support and electrical connectivity.

A dielectrically isolated semiconductor device uses a deep trench filled with n heavily doped layers and polycrystalline silicon to enhance isolation.

Lattice light shielding walls separate visible and infrared pixels, suppressing color mixing from infrared leakage.

Strategic material removal patterns on organic substrate layers optimize thermal warp characteristics for electronic packaging applications.

Silane coupling agents mediate interactions between luminophores and encapsulation, improving radiation stability while maintaining high quantum efficiency.

Contacting the device isolation layer extends the transfer gate vertically, reducing photocharge loss and improving sensitivity in high-density image sensors.

A naked-eye three-dimensional display device integrates a first indium tin oxide electrode layer directly onto an OLED transparent substrate.

Shield electrode between pixel electrodes blocks carrier cross-talk, enabling thicker intrinsic layers for higher quantum efficiency.

A display device forms signal lines in a different layer to overlap scan lines, increasing sub-pixel opening areas.

Segmented gate insulation films stabilize threshold voltage and increase read current by enhancing breakdown voltage between control and memory electrodes.

A light emitting diode integrates a metal bump and a reflective insulation layer covering the active layer side surface.

Removing the white pixel color photoresist prevents light absorption and yellowing while a reflective layer boosts ambient light return for better brightness.

Half tone mask merging consolidates photolithography steps for OLED fanout electrodes, reducing process complexity while maintaining pattern precision.

Trenches with wider lower portions extend the penetration path of outdoor air, reducing the protective layer area and minimizing the non-display area.

Frame glue limits organic layer dimensions for complete inorganic coverage, reducing mask count and cost.

Spaced electrodes and a varying-thickness connection layer enable quantitative moisture permeation detection through resistance measurement.

Placing the black matrix on the array substrate prevents light leakage and improves image contrast without reducing the aperture ratio.

A metal nanolayer contacts the first electrode to lower the work function and enhance charge mobility in organic photoelectric devices.

A digital microfluidic device integrates photosensors with thin film transistors to drive liquid droplet transportation across a hydrophobic layer.

Segmenting the carrier into varying thicknesses allows mounting components on opposite faces, reducing lateral footprint while maintaining vertical compactness.

A boron heterocyclic compound acts as an electron acceptor and linker to enhance light-emitting efficiency in organic light-emitting diodes.

Segmenting the top-emission OLED cathode into multiple grid-connected segments lowers resistance to maintain uniform brightness at large sizes.

Spin-coated photoresist enables local planarization of insulating layers in 3D stacked phase change memory, reducing process complexity and crosstalk.

Rounded interlayer insulation corners in stacked mold layers reduce electric field concentration and lateral charge loss, enhancing integration density.

An OLED interlayer with an uneven surface increases contact area to ensure complete transfer layer separation from the donor substrate.

A display panel uses microcrystalline metallic glass for clock metal wires to maintain ductility during fine coating processes.

Sequential deposition of distinct luminophoric layers on LED pedestals overcomes narrow wavelength distribution to enhance color accuracy and warmth.

A projection liner creates a parallel conduction path in phase change memory cells to stabilize electrical resistance characteristics.

Variable area microlenses direct incident light to specific photodiodes, eliminating crosstalk at pixel edges caused by oblique angles.

An inorganic film with an opening portion prevents moisture ingress into oxide semiconductor layers, stabilizing electrical characteristics.

A PN diode diverts high currents away from sensitive group III-N transistor gates, preventing electrostatic discharge damage during manufacturing.

Redistribution conductors minimize lateral signal travel distance in stacked memory chips, reducing parasitic RC delays and power consumption.

Varying step heights in an imprint template enable single-transfer formation of staircase structures, reducing processing time and step shifts during etching.

A curable organopolysiloxane composition with specific siloxane units and a hydrosilylation catalyst forms a cross-linked network structure.

A hydrogen absorbing film on semiconductor pad electrodes prevents moisture and hydrogen intrusion, maintaining ferroelectric film reliability.

Inert heating of polyaromatic semiconductors stabilizes electrical properties against oxygen reactions while maintaining mobility.

Merged transparent gate electrode and capacitor increase aperture ratio while maintaining transmissibility.