Metal Oxide Semiconductor Structure for Hydrogen Barrier Stability
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Solution Overview
Problem
Current semiconductor devices using metal oxide semiconductor layers face challenges in achieving stable and reliable electrical characteristics, particularly in display devices, due to issues with oxygen vacancies and hydrogen diffusion, which affect mobility and reliability.
Innovation Solution
A semiconductor device structure is developed with a metal oxide semiconductor layer, a gate insulating layer, and a metal nitride insulating layer, where the metal nitride layer reduces resistance and prevents hydrogen and oxygen diffusion, and an island-shaped oxide layer controls oxygen supply to the semiconductor layer, optimizing electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal oxide semiconductor layer is used to achieve high field-effect mobility, then electrical performance is improved, but oxygen vacancies and hydrogen diffusion cause instability in electrical characteristics
Solution Approach 1:
A metal nitride layer is introduced as an intermediary between the metal oxide semiconductor layer and the environment. This layer acts as a diffusion barrier that prevents hydrogen from reaching the semiconductor layer and as an oxygen supply source that reduces oxygen vacancies. The metal nitride layer mediates the interaction between the semiconductor and external factors, blocking harmful hydrogen while providing beneficial oxygen.
Solution Approach 2:
The patent employs a composite structure combining metal oxide semiconductor material with metal nitride material. This composite approach leverages the high mobility characteristics of metal oxide semiconductors while utilizing the barrier and oxygen-supplying properties of metal nitrides to stabilize electrical characteristics, creating a synergistic system that addresses both performance and stability requirements.
2Reliability
If the metal nitride layer is made thicker to better prevent hydrogen diffusion, then reliability is improved, but resistance increases
Solution Approach 1:
The patent optimizes the thickness parameter of the metal nitride layer to achieve a balance between protective function and electrical performance. By carefully controlling the thickness within a specific range, the layer provides sufficient hydrogen barrier protection while maintaining adequate electrical conductivity. This parameter optimization ensures that the protective function is achieved without excessive resistance increase.
3Reliability
If an island-shaped oxide layer is used to control oxygen supply, then oxygen vacancy reduction is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by creating an island-shaped oxide layer only in specific regions where oxygen supply is needed. This localized structure provides oxygen to the semiconductor layer at critical positions while leaving other areas unaffected. The island configuration enables precise control of oxygen supply location and amount, addressing oxygen vacancies where they matter most without requiring perfect uniformity across the entire structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure enhances the electrical characteristics and reliability of semiconductor devices by reducing resistance and minimizing oxygen vacancies, leading to improved field-effect mobility and stability.
Implementation Method 1
the metal nitride layer reduces resistance and prevents hydrogen and oxygen diffusion
Implementation Method 2
the island-shaped oxide layer controls oxygen supply to the semiconductor layer
Data Source
AI summary
A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided.The semiconductor device includes a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a semiconductor layer, and a first conductive layer. The second insulating layer is positioned over the first insulating layer and the island-shaped semiconductor layer is positioned over the second insulating layer. The second insulating layer has an island shape having an end portion outside a region overlapping with the semiconductor layer. The fourth insulating layer covers the second insulating layer, the semiconductor layer, the third insulating layer, and the first conductive layer, is in contact with part of a top surface of the semiconductor layer, and is in contact with the first insulating layer outside the end portion of the second insulating layer. The semiconductor layer contains a metal oxide, the second insulating layer and the third insulating layer contain an oxide, the first insulating layer contains a metal oxide or a nitride, and the fourth insulating layer contains a metal nitride.