Oxide Semiconductor Transistor with Insulated Side Contact
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Solution Overview
Problem
Miniaturization of transistors is hindered by the short-channel effect, which leads to degradation in electrical characteristics such as threshold voltage, subthreshold swing, and increased leakage current, particularly in oxide semiconductor devices due to low carrier density.
Innovation Solution
A semiconductor device structure is developed with an oxide semiconductor layer, source and drain electrodes, and a gate electrode, where the oxide semiconductor layer's side surface is in contact with the electrodes, and an insulating layer covers the upper surface, creating a high resistance region near the interface to relax the electric field and reduce the short-channel effect.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the transistor channel length is reduced to achieve miniaturization, then the device size and power consumption are improved, but the short-channel effect causes degradation in electrical characteristics such as threshold voltage, subthreshold swing, and increased leakage current
Solution Approach 1:
The patent applies local quality by creating a high resistance region specifically at the interface between the oxide semiconductor layer and source/drain electrodes. This localized modification of electrical properties (increasing resistance only at the contact interface) allows the channel length to be reduced while preventing the short-channel effect from degrading the overall electrical characteristics of the transistor
Solution Approach 2:
The patent introduces an insulating layer as an intermediary between the oxide semiconductor layer and the source/drain electrodes. This intermediate layer creates the high resistance region that mediates the interaction between the conductive electrodes and the semiconductor channel, thereby relaxing the electric field and suppressing the short-channel effect that would otherwise occur with miniaturization
2Productivity
If the transistor is miniaturized to improve manufacturing efficiency and reduce device size, then productivity and area are improved, but defects such as short-channel effect become more pronounced
Solution Approach 1:
The patent applies local quality by creating a high resistance region specifically at the interface between the oxide semiconductor layer and source/drain electrodes. This localized modification of electrical properties (increasing resistance only at the contact interface) allows the channel length to be reduced while preventing the short-channel effect from degrading the overall electrical characteristics of the transistor
Solution Approach 2:
The patent introduces an insulating layer as an intermediary between the oxide semiconductor layer and the source/drain electrodes. This intermediate layer creates the high resistance region that mediates the interaction between the conductive electrodes and the semiconductor channel, thereby relaxing the electric field and suppressing the short-channel effect that would otherwise occur with miniaturization
Data Source
AI summary
An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.