Solid-State Devices TRIZ Cases

A gradient silicon oxynitride encapsulation layer surrounds the magnetic tunnel junction stack to protect the device structure.

A dual-host emission layer structure for organic light-emitting devices using complementary charge transport materials.

A composite emission layer combines specific organic materials to enhance charge recombination efficiency in light-emitting devices.

Flexible bent primary conductors wrap around the housing to resolve assembly difficulties and enhance current detection sensitivity.

Folded coupling wirings expand wiring resistance adjustment ranges across varying signal supply distances.

Segmented partition design prevents material residue on pixel electrodes, eliminating dark dots while maintaining high contrast ratios.

An oxide semiconductor transistor uses an insulating layer on the upper surface to create a high resistance region near the source and drain electrodes.

Front and rear ground electrodes between electric lines suppress crosstalk noise, maintaining stable voltage for optical transceivers.

A light-emitting device exposes the thermally conductive substrate surface through a heat dissipation hole in the resist layer.

Adjusts silicon oxide filled shallow trench height in flash memory capacitance areas using selective etching and protective layers.

Black organic insulating layers in a TFT substrate absorb light from micro LEDs, preventing reflection off metal wirings that causes visible screen spots.

Stacked AlGaN layers with graded magnesium concentrations control carrier injection in nitride semiconductor light emitting elements.

Hybrid vapor deposition system manages BX2 and AX vapor circulation for uniform perovskite film formation.

Back-to-back clamping diodes in an ESD enhancement circuit stabilize the SOI substrate bias, resolving the trade-off between robustness and device flexibility.

Segmented pixel regions and preliminary charge storage resolve gate voltage control issues caused by reduced current per pixel in high resolution OLED displays.

Parallel switching devices split current in PCM cells, reducing transistor width and boosting density.

A three-terminal spin-torque memory system uses a magnetic tunnel junction to generate directional spin-current for writing data states.

A correction unit adjusts pixel brightness data using position-specific gains to compensate for drive transistor variations.

A light emitting diode package uses a heat radiation frame and pad to dissipate thermal energy from the device.

Indium-tin-oxide electrodes doped with boron reduce interface energy barriers in organic thin film transistors.

Segmented pixel definition strips with UV-formed insulation portions prevent ink climbing during curing, resolving uneven layer thickness issues.

Replacing solid dielectric with gas-filled voids reduces parasitic capacitance and RC delay, enabling higher integration density.

Thick emissive layer and exciton blocking structure reduce exciton-polaron interactions, extending blue OLED lifetime beyond 10,000 hours.

A standard cell layout structure merges multiple gate contacts into a single shared electrode to reduce manufacturing complexity.

A selectively reflecting layer sits between the semiconductor body and wavelength conversion substance to direct emitted radiation.

Segmented shallow and deep trench isolation with alignment markers reduces optical crosstalk while maintaining production efficiency.

A titanium intermediate layer protects the ITO electrode from galvanic corrosion while maintaining high reflectance.

Common voltage input line groups intersect common electrode lines to distribute uniform voltage across sub-pixels within pixel units.

Aryl-substituted indolocarbazole host materials with electron withdrawing groups achieve long device lifetimes and high external quantum efficiencies.

A semiconductor storage device uses distinct threshold currents and voltages to determine memory cell states through a two-stage read operation.

Segmenting word lines reduces parasitic capacitance in unselected NAND strings, shortening setup time and enhancing read performance.

Side surface grooves accommodate mounting electrodes and joining material fillets, mitigating thermal stress during operation to improve connection reliability.

Bonding a support wafer to a semiconductor substrate via a conductive layer enables thinning without compromising electrical connectivity.

Line type masks form extended sidewalls in storage node contact plugs, increasing top open area and reducing self-aligned contact failures.

Segmented electroluminescence and liquid crystal panels enable 3D display in both portrait and landscape modes.

A multi-bit perpendicular magnetic tunnel junction uses dual free layers to achieve four resistance states.

A light attenuation layer partially encapsulates photodiodes to reduce signal interference between adjacent pixels.

Segmented current paths through pad layers polarize a selected MTJ cell, preventing adjacent cells from erroneous data storage.

A semiconductor fabrication method forms spacer line patterns on photoresist sidewalls to create mesh-shaped masks for high-density device manufacturing.

Laser modified layers enable wafer division while plasma etching removes sidewall residues to maintain chip flexural strength.

A semiconductor light emitting element uses a low temperature buffer layer to establish crystallinity before high temperature growth.

A driver chip signal terminal matrix reduces connection line length, minimizing the non-display region and frame size of the display panel.

Patterned substrates with specific openings reduce dislocation density and mechanical stress in high aluminum concentration semiconductor layers.

Thinning the device wafer and patterning the handle wafer reduces defect densities while increasing breakdown voltage beyond 525 V.

Integrating complementary lateral BJTs amplifies weak charge changes from ionizing radiation, resolving sensitivity limits in solid-state dosimeters.

A thin film transistor array panel uses a unified photoresist mask to pattern metal and semiconductor layers simultaneously.

A capacitor upper electrode structure uses a silicon seed layer to control grain growth in subsequent polysilicon germanium deposition.

A reversible tri-state memory device uses a single shared drive transistor to enable forward and reverse write operations.

A two-transistor NVM cell uses an asymmetric pass transistor with a source halo implant to suppress subthreshold leakage current.

A silicone resin reflective substrate disperses white inorganic filler powder within a three-dimensional cross-linked matrix to achieve high reflectance.