Standard Cell Gate Contact Optimization
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Solution Overview
Problem
The performance of standard cells in semiconductor devices, particularly in flip-flops and logic circuits, is affected by the location and number of gate contacts, leading to variations in data transfer speed and reliability due to the fixed nature of contact placement in nano-scale manufacturing.
Innovation Solution
The proposed solution involves a layout structure for standard cells that allows adjustable placement and reduction of gate contacts, utilizing a double height structure and 2CPP cutting layers to optimize the placement of clock signals and data paths, thereby improving the speed and reliability of NMOS transistors by sharing gate electrodes and reducing the number of gate contacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the number of gate contacts is reduced to improve manufacturing simplicity, then ease of manufacture is improved, but manufacturing precision may deteriorate due to fewer adjustment options
Solution Approach 1:
The patent merges multiple gate contacts into a single shared gate contact that serves multiple transistors (NMOS transistors in the master latch and slave latch). This consolidation reduces the total number of gate contacts from four to one, simplifying the manufacturing process while maintaining precise control over transistor operation through the shared contact structure
Solution Approach 2:
The single gate contact structure is designed to perform multiple functions simultaneously, providing gate control to different transistor groups (master latch NMOS and slave latch NMOS) through its strategic positioning and electrical connection design, thereby achieving multi-functionality with a single component
2Ease of manufacture
If gate contact locations are fixed to simplify layout, then ease of manufacture is improved, but speed deteriorates due to inability to optimize data transfer paths
Solution Approach 1:
The patent applies local quality by strategically positioning the single gate contact at a specific location that optimizes data transfer speed for critical transistors while accepting standard positioning for others. The gate contact is placed to minimize delay in the data path transistors (master latch and slave latch NMOS transistors), creating localized performance optimization without requiring complex global layout adjustments
3Reliability
If multiple gate contacts are used to control different transistor groups, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent combines multiple gate contact structures into a single integrated gate contact that controls multiple transistor groups. This merging reduces device complexity by eliminating redundant contact structures, vias, and interconnect elements while maintaining reliable control over all necessary transistors through the unified contact design
4Speed
If gate contact placement is optimized for speed, then data transfer speed is improved, but ease of manufacture worsens due to complex layout requirements
Solution Approach 1:
The patent implements local quality optimization by positioning the single gate contact to specifically enhance the performance of critical transistors in the data path (master latch and slave latch NMOS transistors). This localized optimization achieves high data transfer speed for the most critical operations without requiring complex global layout adjustments, maintaining ease of manufacture
Data Source
AI summary
A semiconductor device includes a standard cell, which includes first to fourth active areas that are extended in a first direction, first to fourth gate lines that are extended in a second direction perpendicular to the first direction over the first to fourth active areas and are disposed parallel to each other, a first cutting layer that is disposed between the first active area and the second active area and separates the second and third gate lines, a second cutting layer that is disposed between the third active area and the fourth active area and separates the second and third gate lines, a first gate contact that is formed on the second gate line separated by the first cutting layer and the second cutting layer, and a second gate contact that is formed on the third gate line separated by the first cutting layer and the second cutting layer.